IS62WV25616BLL-55TLI-TR Allicdata Electronics
Allicdata Part #:

706-1312-2-ND

Manufacturer Part#:

IS62WV25616BLL-55TLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS62WV25616BLL-55TLI-TR datasheetIS62WV25616BLL-55TLI-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS62WV25616BLL-55TLI-TR represents a class of memory devices used across a broad range of applications. It is classified as a Low-Power SRAM, and specifically belongs to the asynchronous SRAM type. This type of memory is used in applications that require frequent random access, and it is particularly suitable for applications in which data needs to be read and written quickly.

IS62WV25616BLL-55TLI-TR is a single-transistor memory device with a 256 Kbit capacity, and it has a maximum operating voltage of 1.8V. The device is designed to have a low power consumption and is designed to be used in 10ns or faster access times. The device also has a wide operating temperature range, from -40 to +85°C, and it can be used in both industrial and consumer applications.

IS62WV25616BLL-55TLI-TR is a common memory device used in embedded systems, digital signal processors, and field programmable gate arrays. The device is capable of storing data at a high speed and it is commonly used in applications that require long-term data storage. It is also used in memory intensive applications such as digital imaging, voice activated systems, and digital music playback.

The working principle of IS62WV25616BLL-55TLI-TR is based on a single transistor memory technology. This type of memory utilizes the concept of dynamic RAM and consists of a single transistor for each bit of data. The transistor acts as a switch, allowing the amount of charge on each bit line to be read. Whenever the current value of the bit line is different from the stored value, the transistor will alter the current stored in the capacitor, changing the value stored in the bit line.

IS62WV25616BLL-55TLI-TR is an asynchronous SRAM that can provide fast access by allowing for random access of data. It uses a single transistor as the switch and can store data without the need for refreshing data or pre-charge cycles. This makes the device suitable for applications where data needs to be read and written quickly, and it is commonly used in applications such as embedded systems, digital signal processors, and field programmable gate arrays.

In summary, IS62WV25616BLL-55TLI-TR is a low power, single-transistor memory device with a 256 Kbit capacity, a maximum operating voltage of 1.8V, and a wide operating temperature range.It is used in applications that require frequent random access, particularly those that require fast access times, and it is commonly used in embedded systems, digital signal processors, and field programmable gate arrays. The working principle of the device is based on a single transistor memory technology and it can store data at a high speed.

The specific data is subject to PDF, and the above content is for reference

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