
Allicdata Part #: | IS62WV12816BLL-55T-ND |
Manufacturer Part#: |
IS62WV12816BLL-55T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 2M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 2Mb (128K x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.5 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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IS62WV12816BLL-55T belongs to a kind of memory, which is widely used in many electronic applications. It is an integrated device composed of 128K bit static RAM, indivisible 1,024 words by 8 bits, connected to an integrated bidirectional data bus transceiver, programmable chip select and an active-low chip enable. This kind of memory is specially designed for high-performance and low-power applications.
IS62WV12816BLL-55T typically operates at rated voltage of 1.8V to 3V and a maximum operating temperature of 85°C. This device also features two output enable pins, one active-low write enable pin, and two programmable chip selects, providing an optimal solution for mixed memory applications. It is also capable of input voltages up to 7V, and is programmed to support both burst read and write operations.
IS62WV12816BLL-55T offers excellent high-speed performance, with access times as low as 55 nanoseconds. This device has an enhanced control/address latency of only 1 cycle, enabling it to keep up with the system bus bandwidth demands. In addition, it has an operating temperature range of -40°C to 85°C, making it suitable for use in rugged environments.
The working principle of IS62WV12816BLL-55T is based on the concept of static RAM. The static RAM consists of a static memory cell, which consists of two transistors and two capacitors. The capacitors store data even when power is removed from the device. This device has an integrated write enable pin, which is activated with a logic low signal. The chip enable pin is activated with a logic high signal.
When the chip enable pin is active, the device will output data from the address pins specified. If the write enable is activated, the device will accept data from the input pins and store it in the appropriate memory location. IS62WV12816BLL-55T can also operate in burst mode, where the chip enable and write enable pins need not be active for a specified amount of time. This device can also be programmed to support both synchronous and asynchronous operations.
IS62WV12816BLL-55T is mainly used in industrial, automotive and medical applications due to its low power consumption and high performance. With its excellent high-speed performance and its enhanced control/address latency, IS62WV12816BLL-55T can be used for applications such as digital signal processors, arrays of microprocessors, and digital circuitry. This device enables fast, reliable access to data with its low-power, short access time.
In conclusion, IS62WV12816BLL-55T is an ideal choice for embedded applications due to its low power consumption, fast access time and advanced control/address latency. Its versatile programming capabilities make it suitable for various applications, ranging from industrial to automotive to medical use. Its sophistication and reliability make it an excellent solution for high-performance and mixed memory designs.
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