IS62C5128BL-45QLI-TR

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The IS62C5128BL-45QLI-TR is a volatile memory device that belongs to a family of radically low-cost, fast access and low power 64K x 8 CMOS static RAMs. The device is designed for high reliability and long life data storage applications found in a wide variety of consumer, industrial, medical, automotive and aerospace settings. The device could be a great choice for applications that require a large amount of memory coupled with fast access times, such as for embedded systems, driving engineering experiment boards, online games, or medical and automotive data logging systems.

The IS62C5128BL-45QLI-TR belongs to the IS62Cxxx series of high-speed memories, which organized internally as 128Kbit x 8bits configurations. It is manufactured using MOSIS’s 0.7 micron CMOS technology and has a 45ns access time complete with a 25ns default cycle time. This device is rated for single 5V supply operation and can offer 100k cycles write endurance. It also integrates a high-speed static integrity system that requires no refresh cycles, making it suitable for low-power operations.

The IS62C5128BL-45QLI-TR also employs advanced CMOS technology that allows it to lower bit line switching current to 2mA Max., at 25/~C, setting independent of standby current to 40uA max. The device is thus effective in eliminating system power costs and making the design more power efficient. It also has an advanced architecture that allows it to provide high noise immunity, improved data retention stability and allow higher clock speed operations.

In terms of features, the IS62C5128BL-45QLI-TR offers low power consumption and wide range of power requirements. It has a maximum read access time of 45ns and standby current of 40uA maximum. It also has a maximum cycle time of 25ns and data write time of 55ns. It has a power supply voltage range of 4.5V to 5.5V, making it suitable for many applications.The operating temperature range for the IS62C5128BL-45QLI-TR is -40 °C to +85 °C, ensuring it has the ability to perform in extreme environment applications.

In terms of its working principle, the IS62C5128BL-45QLI-TR is composed of eight latches, eight bit lines, and four communication bus line structures. The communication bus lines are used to transmit and receive the information between the memory and the system. When the memory is ready to be accessed, the memory control logic will first activate the chip select line and then generate a read/write cycle command.

The read/write cycle is an electrostatic operation between the read/write bit lines and the latches. When the read/write cycle is in process, the enabled latch is connected with the corresponding bit line. The data is read/write according to the logical state of the bit line, which is driven by the read/write circuit. If a write process is completed, the data stored in the enabled latch is updated, and the write cycle is completed.

The IS62C5128BL-45QLI-TR is an ideal choice for any application that requires a large storage capacity but with a small footprint and low power consumption. With its long data retention and write cycles, it can easily tackle large amounts of data storage requirement with minimal disruption or damage caused to the device. In addition, it can be widely found in all types of applications from automotive to medical, industrial and aerospace settings.

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