IS62WV102416BLL-25TLI-TR Allicdata Electronics
Allicdata Part #:

IS62WV102416BLL-25TLI-TR-ND

Manufacturer Part#:

IS62WV102416BLL-25TLI-TR

Price: $ 10.85
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 16M PARALLEL 48TSOP I
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: IS62WV102416BLL-25TLI-TR datasheetIS62WV102416BLL-25TLI-TR Datasheet/PDF
Quantity: 1000
1500 +: $ 9.85901
Stock 1000Can Ship Immediately
$ 10.85
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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IS62WV102416BLL-25TLI-TR is a type of high-speed CMOS static random access memory (SRAM). The IS62WV102416BLL-25TLI-TR is comprised of 1,024k bits and features an access time of 25ns with extended temperature range from -40°C to +85°C and Endurance of 10,000 cycles. This capable device is available in an industry-standard 44-pin SOJ, 512Kx16, with a 5V power supply.

The IS62WV102416BLL-25TLI-TR SRAM is a type of non-volatile memory that stores data in cells that can be accessed very quickly. The data stored in each cell is in the form of a binary value, either zero or one. This type of memory is fast and efficient, making it suitable for a variety of applications, such as real-time control systems, network routers, telecommunications, high-end computer systems, robotics, and other embedded applications.

The IS62WV102416BLL-25TLI-TR SRAM is a dual port device, featuring separate address and data buses that allow independent read and write operations on each port simultaneously. This makes the device ideal for applications such as pipeline caches and memory-mapped I/O architectures. In addition, it has a wide operating temperature range and is available in a range of packages. This makes it suitable for a variety of applications, such as automotive, medical, industrial, and consumer electronics.

The working principle of IS62WV102416BLL-25TLI-TR SRAM is relatively simple. Each memory cell is made up of two transistors, known as "bitcell". As data is read from the SRAM cell, the transistor gate on the bitcell is opened and the bit of data stored in the cell is read. The voltage of the bitcell determines the value of the data stored. When data is written to the SRAM cell, the gate of the bitcell is closed and a voltage is applied to the bitcell, which then stores the data.

To ensure the accuracy of data stored in the SRAM, error correction circuits are used. Error Correction Code (ECC) is a type of code used to detect and correct any bit errors that may occur in the data. This type of code is used in memory modules as well as hard disk drives, optical disk drives, and other types of data storage. The ECC is also used to detect any data integrity issues caused by environmental phenomena such as radiation.

IS62WV102416BLL-25TLI-TR SRAM is a high-speed, low-power, and cost-effective memory solution for a variety of applications in automotive, industrial, medical, and consumer electronics markets. With its wide operating temperature range, low power consumption, and fast access time, it is an excellent choice for real-time control systems and embedded systems. The device is available in a range of packages, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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