ISL6610CRZ Allicdata Electronics
Allicdata Part #:

ISL6610CRZ-ND

Manufacturer Part#:

ISL6610CRZ

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR DUAL SYNC 16-QFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-QFN (4...
DataSheet: ISL6610CRZ datasheetISL6610CRZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): -, 4A
Base Part Number: ISL6610
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 8ns, 8ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 4.5 V ~ 5.5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 4
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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ISL6610CRZ is a high-voltage synchronous gate driver that offers a wide range of features and capabilities all within the same compact 6.3-mm × 6.3-mm package. It is designed to provide a robust interface between high-voltage MOSFETs and low-voltage controllers such as microprocessors, FPGAs, or other logic-level controllers. This product is primarily suitable for driving large MOSFETs in inverters, motor drives, power supplies and battery-management systems.

Introduction to ISL6610CRZ

The ISL6610CRZ is a high-voltage synchronous gate driver that offers a wide range of features and capabilities all within the same compact 6.3-mm × 6.3-mm package. It is ideal for driving the power switches in motor drives, solenoid actuators, power supplies and other leading-edge applications. The device includes two independent gate drivers: one for driving external N-channel MOSFETs and a second for driving external P-channel MOSFETs. Each driver includes active rise and fall time controls as well as pulse width modulation and short circuit protection.The ISL6610CRZ is designed to provide a robust interface between high-voltage MOSFETs and low-voltage controllers such as microprocessors, FPGAs or other logic-level controllers. The device is well-suited for applications requiring multiple high-voltage MOSFETs with varying current and voltage requirements. The ISL6610CRZ also offers protection against overtemperature, overvoltage and ESD, ensuring reliable operation in harsh environments.

ISL6610CRZ Application Fields

The ISL6610CRZ is a high-voltage synchronous gate driver that is primarily suitable for driving large MOSFETs in the following applications:
  • Inverters
  • Motor Drives
  • Power Supplies
  • Battery-Management Systems
  • Solenoid Actuators
Inverters, motor drives and power supplies often require multiple high-voltage MOSFETs to be driven in parallel. The ISL6610CRZ is the ideal device for this application since it integrates two independent drivers with active rise and fall time controls as well as pulse width modulation and short circuit protection.The ISL6610CRZ is also suitable for battery-management systems, which require full control over charge and discharge cycles. These systems frequently require multiple MOSFETs to be driven in parallel and the ISL6610CRZ is a perfect solution for this application.The ISL6610CRZ is also well-suited for driving solenoid actuators. The device offers extensive protection that ensures reliable operation even in harsh environments.

ISL6610CRZ Working Principle

The device includes two independent gate drivers: one for driving external N-channel MOSFETs and a second for driving external P-channel MOSFETs. The gate signals for the N-channel MOSFETs are generated from the high side pin, while the gate signals for the P-channel MOSFETs are provided from the low side pin.The ISL6610CRZ is designed to provide optimized gate drive for both N-channel and P-channel power MOSFETs. The device features active rise and fall time control to avoid overshooting and undershooting of voltage levels. The device also features integrated pulse width modulation (PWM) to provide a consistent gate drive across a wide range of specific load conditions.The ISL6610CRZ also includes a number of protection features to ensure reliable operation in harsh environments. These include overvoltage protection (OVP) to guard against voltage spikes, over-temperature protection (OTP) to protect the device from thermally-induced damage, and electrostatic discharge (ESD) protection to defend against electrical damage.

Conclusion

The ISL6610CRZ is an advanced high-voltage synchronous gate driver. It offers two independent gate drivers, active rise and fall time control, pulse width modulation and several protection features. It is primarily suitable for driving large MOSFETs in inverters, motor drives, power supplies and battery-management systems. This device is the ideal solution for applications requiring multiple high-voltage MOSFETs with varying current and voltage requirements.

The specific data is subject to PDF, and the above content is for reference

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