ISL6613BIRZ-T Allicdata Electronics
Allicdata Part #:

ISL6613BIRZ-T-ND

Manufacturer Part#:

ISL6613BIRZ-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 10-DFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 10-DFN (3...
DataSheet: ISL6613BIRZ-T datasheetISL6613BIRZ-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613B
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 7 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The ISL6613BIRZ-T is a gate driver from Intersil Corporation, a leader in power management that helps sustain the environment with efficient energy solutions. It is a member of their PMIC - Gate Drivers product range, and is designed for driving high speed power MOSFETs and IGBTs in high power switching applications. It features both logic and power stages, providing two low-side drivers, two high-side drivers, built-in under-voltage lockout, and over-current protection.

The ISL6613BIRZ-T employs two separate switching half bridges, which drive two independent high-side and low-side power MOSFETs or IGBTs. Each half bridge is composed of two low-side drivers, two high-side drivers, one over-current protection circuit, and one under-voltage lockout circuit. Each driver is capable of operating at an adjustable current rating up to 40A and providing pre-bias time for the gate circuit.

The integrated under-voltage lockout monitor circuit prevents the power MOSFETs/IGBTs from turning on unexpectedly in the event of a low or dropping supply voltage. It also prevents the power MOSFETs/IGBTs from turning on when the load is too small or the power MOSFETs/IGBTs are not properly initialized. The over-current amplifier circuit monitors the current draw from the power stage, and shuts off the power supply when an over-current is detected. This protects against damage due to high current draw.

The ISL6613BIRZ-T is ideal for a variety of applications such as AC/DC power supplies, server power supplies, telecom power supplies, industrial power inverters, motor drives and many more. It is also suitable for a variety of motor drive applications, such as servo motor drives, electric motor drives, and brushless DC motor drives.

In addition, the ISL6613BIRZ-T features several features to ensure its optimal performance, such as current-limiting on the high-side drivers, short-circuit detection, adjustable turn-off delay, and adjustable dead time. This makes it highly reliable and suitable for a variety of applications that require gate driving.

In summary, the ISL6613BIRZ-T is an ideal choice for gate driving high speed power MOSFETs and IGBTs in high power switching applications. It is designed with several features to ensure reliable operation in all considerations. Its versatile design provides high level of flexibility for applications in a variety of power supplies, motor drives and other high power switching applications.

The specific data is subject to PDF, and the above content is for reference

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