ISL6613EIBZ

Current - Peak Output (Source, Sink):	1.25A, 2A
Base Part Number:	ISL6613
Supplier Device Package:	8-SOIC-EP
Package / Case:	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	26ns, 18ns
High Side Voltage - Max (Bootstrap):	36V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	--
Voltage - Supply:	10.8 V ~ 13.2 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tube

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PMIC - Gate DriversISL6613EIBZ is a high performance three-phase gate driver for applications such as motor drives, robotics, and industrial automation. The device is designed to switch three high-side and three low-side external power MOSFETs for controlling a three-phase motor, up to 1.2KV V DSS . The device is composed of 8 half bridges, each with 3 high and 3 low transistors. It operates from a 5 V to 16 VDC supply, and can deliver up to 500 mA of gate drive current per channel.ISL6613EIBZ is one of the most advanced gate drivers available, and it has a wide range of application fields. It is used in motor drives, robotics, industrial automation and AC switching systems, such as variable speed drives, Fan Control, Solar Power Inverters and AC Motor Control. In addition, it can be used in power converters, power processing ICs, and any other application needing gate drive current up to 500mA.The working principle of ISL6613EIBZ is based on a mixed signal of PWM/PWMFN technology. The PWM/PWMFN controls the low-side and high-side power MOSFET switches directly, thus eliminates the need for additional level shifters or multiplexers. Each MOSFET switch is controlled by an independently adjustable rise and fall times, with a pulse duration up to 50us and a cycle up to 2ms. This provides very precise and efficient control over the MOSFET switch, allowing for higher switching frequencies, lower switching losses and higher efficiency. The device is configured to either single-phase or three-phase application mode in order to maximize the performance and flexibility.ISL6613EIBZ is also capable of driving 3 low-side and 6 high-side power MOSFETs in parallel with effective current monitoring, overvoltage and undervoltage protection, overcurrent protection, and advanced thermal shutdown protection. The device also offers flexible bridging options, from 4-phase to single-phase, allowing for better control over the motor drive system.The main advantage of the ISL6613EIBZ is its ability to drive high-side and low-side power MOSFETs in a wide range of voltages with precise timing and control. It allows for very precise control over the current in each phase, which leads to improved system efficiency and better power saving. The device also offers overvoltage and undervoltage protection, overcurrent protection, and advanced thermal shutdown protection to ensure the system’s safety.Overall, ISL6613EIBZ is a powerful and versatile three-phase gate driver IC that provides precise control over switching power MOSFETs in motor drive applications. With its precise timing, current monitoring and wide range of protection features, it is the perfect device for powering high power applications safely and reliably.

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