ISL89164FBEBZ Allicdata Electronics
Allicdata Part #:

ISL89164FBEBZ-ND

Manufacturer Part#:

ISL89164FBEBZ

Price: $ 2.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: MOSFET DRIVER 2CH 5.0V 6A 8SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC-EP
DataSheet: ISL89164FBEBZ datasheetISL89164FBEBZ Datasheet/PDF
Quantity: 486
1 +: $ 2.43810
10 +: $ 2.18925
100 +: $ 1.79361
500 +: $ 1.52687
1000 +: $ 1.28772
Stock 486Can Ship Immediately
$ 2.68
Specifications
Logic Voltage - VIL, VIH: 1.85V, 3.15V
Base Part Number: ISL89164
Supplier Device Package: 8-SOIC-EP
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 20ns, 20ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 6A, 6A
Series: --
Voltage - Supply: 4.5 V ~ 16 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tube 
Description

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The ISL89164FBEBZ is a PMIC (Power Management Integrated Circuit) Gate Driver specifically designed for MOSFET and IGBT switching applications. It is designed with low on-resistance and very low gate-drive power consumption, making it ideal for highly efficient, low-power systems. This particular device offers two channels of independent high-speed I2C or PMBus control gate drivers, enabling faster switching times and better thermal performance. As such, the ISL89164FBEBZ is suitable for a variety of applications including solar power inverters, motor drives, power supply conversion and lighting.

The ISL89164FBEBZ provides several key features and benefits beyond typical entry-level PMIC Gate Drivers. It offers built-in temperature protection and a thermal shutdown feature that activates when the die temperature reaches an unsafe level, thus avoiding the dangers of thermal runaway. The integrated ESD protection on the gate drivers helps protect against voltage spikes during power conversion, ensuring safe and reliable operation. Additionally, the flexible I2C or PMBus interface provides a simple interface for host microcontrollers, allowing for the easy configuration of all power conversion parameters.

The working principle of the ISL89164FBEBZ is fairly straightforward. It utilizes high-speed I2C or PMBus control to drive gate voltage, resulting in current being delivered to the MOSFET or IGBT. The voltage is continually monitored throughout the process—if the voltage exceeds the threshold, the device will shut down as a safety measure to protect the system. The single-channel driver allows for up to 14A and the dual-channel driver allows up to 12A each. The device also supports either a single-phase or dual-phase control configuration, enabling rapid switching times and significant power conversion performance improvements.

It is important to note that the ISL89164FBEBZ is not suitable for use in low-current and low-voltage applications. The device will not properly operate in high-voltage, low-current applications, or applications that require a voltage exceeding the 24V VCC maximum rating. Additionally, the device must be configured correctly and must be properly identified in the I2C or PMBus interface prior to the application. As with any PMIC Gate Driver, it is important to read the datasheet or consult application engineers for proper device configuration.

In summary, the ISL89164FBEBZ is a high-performance PMIC Gate Driver specifically designed for MOSFET and IGBT switching applications. Its low on-resistance and low gate-drive power consumption make it ideal for applications requiring rapid switching times and high power conversion efficiency. Its integrated temperature protection, ESD protection and I2C/PMBus interface ensure safe operation and easy configuration. The ISL89164FBEBZ is capable of delivering up to 14A single-channel and up to 12A dual-channel gate current. It should be noted, however, that the device is not suitable for low-current and low-voltage applications or applications with a higher VCC than 24V.

The specific data is subject to PDF, and the above content is for reference

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