IX2R11S3T/R Allicdata Electronics
Allicdata Part #:

IX2R11S3T/R-ND

Manufacturer Part#:

IX2R11S3T/R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC DRVR HALF BRIDGE 2A 16-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-SOIC
DataSheet: IX2R11S3T/R datasheetIX2R11S3T/R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 2A, 2A
Base Part Number: IX2*11
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 8ns, 7ns
High Side Voltage - Max (Bootstrap): 500V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 6V, 9.6V
Voltage - Supply: 10 V ~ 35 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IX2R11S3T/R is a high performance gate driver circuit specifically designed for Parallel Mechnical Interlock Controllers (PMIC) applications.

IX2R11S3T/R is specifically designed for operating high frequency motor control application, by providing full half-bridge driver outputs with monolithic CMOS circuitry. It is a monolithic integrated circuit which combines half-bridge MOSFET driver, linear regulators, and self-protection circuits. It provides precise gate drive signals for power switches from 1000V to 2000V in automotive and industrial applications, such as three-phase high frequency DC motor drive, brushless DC motor drives, etc.

The main features of the device includes low gate-emitter capacitance, fast gate driver response times, output over voltage protection and crowbar current limit, leading to higher power efficiency and long-term operating reliability.

This device contains two separate power outputs, a high side driver and a low side driver, providing symmetrical drive voltage. Each output can be driven to 6A peak, thus allowing the application to reach 45A peak current at the maximum voltage rating. The two outputs are controlled by the logic inputs, PWM and /EN ( Enable ) Pin.

The gate driver circuit of the IX2R11S3T/R works by providing a constant and regulated output voltage that is higher than the threshold Vth, thus allowing the gate oxide of the MOSFET to stay at its rated voltage range and improve the switch on-off performance as well as reduce the power losses. The additional over voltage protection feature helps to avoid over heating and failure of the MOSFETs.

Another feature is Self-Protection Circuit (SPC), which helps to improve the overall EMI and reliability behavior. The SPC senses the start-up voltage of the power switch, and if it is too high, the SPC will interrupt the drive signal to reduce the associated power losses. This is done by adjusting the gate voltage to a safe value that won’t damage the MOSFETs, preventing catastrophic failures of the system.

The IX2R11S3T/R also provides many safety features such as under voltage lockouts, short circuit protection and overtemperature protection further improving the reliability of the application.

Overall, the IX2R11S3T/R is a high performance, efficient and reliable gate driver IC that can be used in any PMIC application where precise gate drive signals are needed. It is a cost effective solution for motor drives which will ensure a reliable operation for longer time.

The specific data is subject to PDF, and the above content is for reference

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