IX4R11M6T/R

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The IX4R11M6T/R is one of the many gate drivers from IXYS Corporation\'s line of power management ICs (PMICs). As a PMIC, it provides control functions for power management in applications related to motor control, telecommunications, and high voltages. Specifically, the IX4R11M6T/R is a high-voltage half-bridge high-side gate driver with integrated logic. It is designed to switch high-voltage IGBTs and MOSFETs with a common emitter configuration.

The IX4R11M6T/R comes equipped with a number of features that make it an ideal solution for a variety of applications. It has an integrated boosting circuit that increases the current capability of the half-bridge topology, allowing it to drive larger IGBTs and MOSFETs. It also has dual bootstrap pins for enhanced EMC robustness. Additionally, the device includes logic signals for use in power management such as logic-level switching, protection, and sequencing.

The IX4R11M6T/R is suitable for applications such as motor control, server power supplies, and high-voltage power supplies. It is suitable for use in automotive, military, and telecommunications applications. Its integrated boosting circuit and dual bootstrap pins make it suitable for driving larger IGBTs and MOSFETs and provide enhanced EMC robustness.

The IX4R11M6T/R consists of two gate drivers and a logic chip. The gate drivers are responsible for turning the power devices on and off based on the logic chip. The logic chip is responsible for controlling the gate drivers according to the logic signals input. The gate drivers in turn activate the power devices by turning them on to drive them and turn them off to stop them from being driven. The logic chip then uses this information to control the other power devices.

The IX4R11M6T/R is powered by a wide range of supply voltages. It has an operating voltage range from +5 V to -14 V and a standby voltage from 0.1 V to 5 V. It also accepts a wide range of input and output signals, making it suitable for a wide range of applications. Furthermore, it has an adjustable rise and fall time, making it suitable for high-speed switching.

The IX4R11M6T/R is designed to work in high-temperature environments, with an operating temperature range of -40 °C to +125 °C. Furthermore, it is designed to work with a wide range of IGBTs and MOSFETs, making it suitable for a wide range of applications. Its wide voltage range and adjustable rise and fall time also make it suitable for high-speed switching.

In conclusion, the IX4R11M6T/R is a high-voltage half-bridge high-side gate driver with logic input. It is suitable for motor control, server power supplies, and high-voltage power supplies. Its integrated boosting circuit and dual bootstrap pins make it suitable for driving larger IGBTs and MOSFETs and provide enhanced EMC robustness. The device has an operating voltage range from +5 V to -14 V and a standby voltage from 0.1 V to 5 V. It also has an adjustable rise and fall time, making it suitable for high-speed switching. Finally, it is designed to work in high-temperature environments, with an operating temperature range of -40 °C to +125 °C.

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