IXA4IF1200TC Discrete Semiconductor Products |
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Allicdata Part #: | IXA4IF1200TC-ND |
Manufacturer Part#: |
IXA4IF1200TC |
Price: | $ 3.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 9A 45W TO252AA |
More Detail: | IGBT PT 1200V 9A 45W Surface Mount TO-268AA |
DataSheet: | IXA4IF1200TC Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
30 +: | $ 2.73861 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 9A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 3A |
Power - Max: | 45W |
Switching Energy: | 400µJ (on), 300µJ (off) |
Input Type: | Standard |
Gate Charge: | 12nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | 600V, 3A, 330 Ohm, 15V |
Reverse Recovery Time (trr): | 350ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268AA |
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IXA4IF1200TC is a field effect transistor N-channel enhancement device, available in a 4-pin plastic TO-220AB package. It is designed for use in applications such as general-purpose switching, induction heating, lighting dimmers, and medium-speed switching. The IXA4IF1200T is an IGBT, or insulated-gate bipolar transistor, which is a type of field-effect transistor (FET) that combines the high input impedance of a FET with the fast switching speeds and low saturation voltage of a bipolar junction transistor (BJT).
The IXA4IF1200TC has a high maximum voltage rating, so it can handle high voltage swings without damage. In addition, the device has a low turn-on voltage, meaning it can be switched on quickly with minimal power consumption. The IXA4IF1200TC can also handle higher switching frequencies than other IGBTs, making it suitable for applications that require rapid switching.
In operation, the IXA4IF1200T device acts like two transistors in series. The first transistor is an N-channel enhancement FET which amplifies the input current. The second transistor is an NPN bipolar junction transistor which amplifies the voltage produced by the first transistor. The output current is proportional to the input current and is limited only by the saturation voltage of the device. The high input impedance of the IXA4IF1200TC means that it can be driven directly from a current source.
The IXA4IF1200TC has a maximum collector current of 1200A, allowing it to handle high currents. In addition, the device has a low turn-on voltage, allowing it to be switched on quickly with minimal power consumption. The IXA4IF1200TC can also handle higher switching frequencies than other IGBTs, making it suitable for applications that require rapid switching.
The IXA4IF1200TC is designed for use in applications where fast switching and low saturation voltage are key requirements. The device is well-suited to applications such as general-purpose switching, induction heating, lighting dimmers, and medium-speed switching. With its high maximum voltage rating, low turn-on voltage, and high switching frequencies, the IXA4IF1200TC is a versatile and reliable device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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