IXA40PG1200DHGLB-TRR

Series:	--
Part Status:	Active
IGBT Type:	PT
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	63A
Power - Max:	230W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 35A
Current - Collector Cutoff (Max):	150µA
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	9-SMD Module
Supplier Device Package:	ISOPLUS-SMPD™.B

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IXA40PG1200DHGLB-TRR Application Field and Working PrincipleIGBT or insulated-gate bipolar transistors are a type of power semiconductor which combines the properties of both a MOSFET and a bipolar junction transistor. This combination of bipolar and field-effect transistor structure have led to IGBTs becoming the preferred semiconductor device for high power applications. The IXA40PG1200DHGLB-TRR is a high-power device from IXYS which is a Rajant family of products containing IGBTs, thyristors, and diodes. This device, in particular, is designed for automotive, renewable energy technology, communications media, and consumer/ industrial applications as it provides a high switching speed, low forward voltage drop, and low gate charge.Features and BenefitsThe IXA40PG1200DHGLB-TRR features a high blocking voltage of 1200V, a low RDS(on) of 38mΩ and can sustain a peak repetitive current of 40A. The low switching and conduction losses offered by the device make it suitable for use in applications such as air conditioners, power inverters, and motor drives. Additionally, the IXA40PG1200DHGLB-TRR also possesses a fast switching speed of 1.2μs, a low forward voltage drop of 0.90V and low gate charge of 13nC which make the device suitable for applications in renewable energy systems such as solar cell wind turbines. Additionally, the product\'s high blocking voltage makes it suitable for use in automotive and consumer applications such as uninterruptible power supplies and battery power systems. Moreover, this device offers high dV\dt and dI/dt immunity as well as high temperature robustness which makes it suitable for high temperature applications such as welding machines and fuel cell systems.Design and StructureThe IXA40PG1200DHGLB-TRR utilizes an Improved Rugged IGBT (IRGB) technology which is optimized for both thermal performance and electrical performance. The product\'s design consists of a trench gate N+ drift substrate, a chip weldable Capacitance (CWE) system, an AlGaAs field stop layer, and an annealed drift layer. The AlGaAs field stop layer is used to prevent current leakage and enhance the temperature robustness of the device. The drift layer is designed to reduce switching loss and make the device more reliable. The CWE system is used to reduce the device\'s output capacitance and ensure the high voltage blocking capability of the product. Working PrincipleThe IXA40PG1200DHGLB-TRR is a four-terminal device with two terminals for gate control, one for source and the other for drain. It is a voltage controlled device which means that the output current is determined by the input voltage. When the gate potential of the device is increased, the current flowing through the device increases and when the voltage at the gate is decreased, the current decreases. The device works on the principle of operation which ensures that only a certain value of current flows through the device. ApplicationsThe IXA40PG1200DHGLB-TRR is suitable for a variety of high-power applications. It is used in air conditioners, power inverters, motor drives, renewable energy systems such as solar cell wind turbines, uninterruptible power supplies, battery power systems and fuel cell systems. The device is also frequently used in welding and other high temperature applications. The IXA40PG1200DHGLB-TRR is a highly versatile device with a high voltage blocking capability and low switching and conduction losses.

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