Allicdata Part #: | IXA4IF1200UC-ND |
Manufacturer Part#: |
IXA4IF1200UC |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 9A 45W TO252AA |
More Detail: | IGBT PT 1200V 9A 45W Surface Mount TO-252, (D-Pak) |
DataSheet: | IXA4IF1200UC Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
2500 +: | $ 0.68763 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 9A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 3A |
Power - Max: | 45W |
Switching Energy: | 400µJ (on), 300µJ (off) |
Input Type: | Standard |
Gate Charge: | 12nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | 600V, 3A, 330 Ohm, 15V |
Reverse Recovery Time (trr): | 350ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
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The IXA4IF1200UC is a field-stop insulated gate bipolar transistor (IGBT) designed to drive high power and voltage applications up to 1200V, making them particularly well-suited for power conversion and motor control applications. This IGBT feature a high current carrying capacity, low on resistance, and low switching losses, making them well-suited to many applications. This article will focus on the IXA4IF1200UC’s application field and working principle.The IXA4IF1200UC can be used in a wide range of applications, including renewable energy inverters, industrial motor control, UPS systems, and general motor control. Its motor control capability is particularly well-suited for applications such as wind turbines, fuel cells, and solar energy applications. These IGBTs are also ideal for welding, plasma cutting, and other high power applications.The IXA4IF1200UC features a built-in field stop that prevents current oscillation during switching and allows for improved current and voltage control. This feature is particularly useful for applications that require precise control of both voltage and current. Additionally, the IGBT features a low capacitance semiconductor structure that reduces switching losses, allowing for higher efficiency and power conversion in the system.The IXA4IF1200UC works by using two current paths: one path runs through the semiconductor material of the IGBT, while the other runs through a control electrode. When the control electrode is turned on, a voltage is applied to the IGBT, which causes a current to flow through the IGBT and the control electrode. The current then flows to the field stop, where it is prevented from oscillating due to the field stop’s being open and preventing the current from reflecting back to the IGBT.The IXA4IF1200UC works in two stages. The first stage is the turning on of the IGBT, where the control electrode is turned on and a voltage is applied. This causes the IGBT to turn on and current to flow through the IGBT and the control electrode. The second stage is the turning off of the IGBT, where the control electrode is turned off and the IGBT is prevented from oscillating due to the field stop.The IXA4IF1200UC is a high-voltage, high-current IGBT designed for a variety of power control applications. It features a built-in field stop that prevents current oscillation, allowing for improved current and voltage control. Additionally, its low capacitance semiconductor structure reduces switching losses for increased efficiency and power conversion. The IXA4IF1200UC’s wide range of applications and its unique features make it an ideal solution for many power supply and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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