IXBD4411SI Allicdata Electronics
Allicdata Part #:

IXBD4411SI-ND

Manufacturer Part#:

IXBD4411SI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC HIGH SIDE DRIVER 16SOIC
More Detail: High-Side Gate Driver IC Non-Inverting 16-SOIC
DataSheet: IXBD4411SI datasheetIXBD4411SI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 2A, 2A
Base Part Number: IXBD4411
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 15ns, 15ns
High Side Voltage - Max (Bootstrap): 1200V
Input Type: Non-Inverting
Series: ISOSMART™
Logic Voltage - VIL, VIH: 1V, 3.65V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: High-Side
Part Status: Obsolete
Packaging: Tube 
Description

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PMIC (Power Management ICs) gate drivers assist power switches, such as MOSFETs, IGBTs, BJTs and thyristors, in recieving controlled voltage and switching it off quickly and safely. This type of IC often works as an interface between the controller and the power switch. The IXBD4411SI is an integrated gate driver IC specifically designed to control MOSFETs in power process applications.

Application Field and Working Principle of IXBD4411SI

The IXBD4411SI integrated gate driver is specially designed to control and drive a MOSFET in power management process applications, such as solar inverters and AC / DC converters. It is designed for high frequency operations and has a built-in protection against static output current for both high and low sides of the MOSFET, allowing it to maintain a stable output voltage and current level across the load.

The IXBD4411SI is an integrated gate driver IC capable of driving both high and low side power MOSFET transistors with a single device. It features high speed, low noise and low dissipated power in both normal and fault conditions. This IC is equipped with a built-in protection circuit, allowing it to safely protect against fault events such as overvoltage, undervoltage, overcurrent and over temperature.

When low side power MOSFETs is off, the output of pin IN1 is maintain 0V and the input of IXBD4411SI is held low. When high side power MOSFETs is on, the output of PIN IN1 is held high and the IN2 is held low. Thus, the IXBD4411SI provides high drive speed and low noise control, enabling it to operate at high frequencies.

The IXBD4411SI also has integrated Enable and Disable functions. The Enable (EN) module keeps the power MOSFETs in the off state when the Enable module is activated. The Disable (DS) module puts the power switch in the on state after the power MOSFETs is disabled. This ensures that the IC is always in the correct state, allowing it to provide a safe, reliable power management process.

Moreover, the output voltage of IXBD4411SI is adjustable via the UV/OV Selector module, which allows the user to select the optimal output voltage. The device also has a wide range of output current ratings and an integrated overcurrent protection circuit, which enables it to provide a safe operation across a wide range of load currents.

The IXBD4411SI integrated gate driver IC is an efficient and cost-effective solution for a wide range of power process applications such as solar inverters and AC / DC converters. It is designed for fast switching speeds, low noise and low power dissipation in both normal and fault conditions. It has integrated enable/disable functions and an adjustable output voltage and wide range of output current ratings, providing a safe and reliable power management process.

The specific data is subject to PDF, and the above content is for reference

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