| Allicdata Part #: | IXBF12N300-ND |
| Manufacturer Part#: |
IXBF12N300 |
| Price: | $ 28.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 3000V 26A 125W ISOPLUSI4 |
| More Detail: | IGBT 3000V 26A 125W Through Hole ISOPLUS i4-PAC™ |
| DataSheet: |  IXBF12N300 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 25.79850 |
| 10 +: | $ 23.86380 |
| 25 +: | $ 21.92880 |
| 100 +: | $ 20.38080 |
| Power - Max: | 125W |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Package / Case: | i4-Pac™-5 (3 Leads) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 1.4µs |
| Test Condition: | -- |
| Td (on/off) @ 25°C: | -- |
| Gate Charge: | 62nC |
| Input Type: | Standard |
| Switching Energy: | -- |
| Series: | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 12A |
| Current - Collector Pulsed (Icm): | 98A |
| Current - Collector (Ic) (Max): | 26A |
| Voltage - Collector Emitter Breakdown (Max): | 3000V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The IXBF12N300 is a high-terminal, 1200V IGBT NFET module designed to offer high speed switching operations in a variety of applications. The device is suitable for use with a wide range of input voltage sources ranging from 0 - 600V and can be used to switch current ratings of up to 30A. It has an integrated high-speed drive IC which offers superior protection against over-voltage and current-surges.
The IXBF12N300 is suitable for use in a number of applications such as motor control, inverter drive and high-efficiency solar cells. It is particularly suited for applications requiring high speed switching operations where it can deliver fast switching times and save power compared to other types of transistors.
The working principle of the IXBF12N300 is based on the use of an insulated gate bipolar transistor (IGBT), which is a voltage-controlled device consisting of two bipolar transistors encapsulated into one die. An IGBT is able to switch current very quickly, allowing it to be used in high switching speed applications. When a gate voltage is applied, a configured panel of voltage between the gate and the base of the N-channel transistor causes an increase in the current flow between the drain and the source, thus allowing the transistor to switch current very quickly.
The IXBF12N300 also features a number of integrated protection features to prevent over-voltage and current surges. These protection features include electronic fuses, delay currents, temperature and current limiting measures, as well as active gate protection.
In summary, the IXBF12N300 is a high-terminal, 1200V IGBT NFET module designed to offer high speed switching operations in a variety of applications. It is capable of switching current ratings of up to 30A and can deliver fast switching times, saving power compared to other types of transistors. It is suitable for use in motor control, inverter drive, and high-efficiency solar cells, and is equipped with a range of protective measures to prevent over-voltage and current surges.
The specific data is subject to PDF, and the above content is for reference
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