IXBF15N300C

Power - Max:	300W
Supplier Device Package:	ISOPLUS i4-PAC™
Package / Case:	i4-Pac™-5 (3 Leads)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	706ns
Test Condition:	1500V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C:	40ns/455ns
Gate Charge:	267nC
Input Type:	Standard
Switching Energy:	9.15mJ (on), 1.4mJ (off)
Series:	BIMOSFET™
Vce(on) (Max) @ Vge, Ic:	6V @ 15V, 15A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	37A
Voltage - Collector Emitter Breakdown (Max):	3000V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXBF15N300C Application Field and Working Principle

The IXBF15N300C is one of the most popular IGBTs from the single device category; it is widely used in various systems, ranging from inverters to motor drives. This article takes a closer look at the IXBF15N300C and its performance-related features, in addition to providing insight into its application field and working principle.

Performance Features

The IXBF15N300C offers several performance-related features that make it well-suited for its applications. Firstly, the high current capacity of 300 A makes it suitable for the more demanding applications. Moreover, the device has a low VCE(sat) (2 V max @ 300 A) that enables excellent performance during switching operations. It also offers an excellent EON (GV) figure of 11.1 mΩ @ 300 A that goes towards improved efficiency and smaller energy losses. Furthermore, the characteristically low tail current also ensures excellent efficiency, with its low gate charge helping to reduce switching losses. Finally, the junction temperature of 175 °C helps to minimize the need for cooling.

Application Field

The IXBF15N300C is primarily used in switch-mode inverter applications operating at frequencies up to 20 kHz. It is also an ideal choice for various motor drive applications, where its cooling-friendly junction temperature and high current capacity offer better control over the operation. Additionally, it can be used in welding systems to ensure efficient power delivery, and its low switching losses make it a good choice for the more demanding IGBT applications.

Working Principle

The IXBF15N300C is a type of IGBT, or insulated-gate bipolar transistor. It consists of two sections: an insulated gate field-effect transistor (IGFET) and a bipolar junction transistor (BJT). The IGBT functions by utilizing the operation of both devices. The IGFET section is the gate portion of the IGBT, and it acts as a gate to switch the current by controlling the voltage applied to the gate-to-drain terminal. Meanwhile, the BJT section amplifies the current. When the required voltage is applied to the gate, it will modulate the current by allowing the transistor to turn on or off. This process is known as switching.In conclusion, the IXBF15N300C is a single-device IGBT that offers a range of features to help improve the performance of applications. It enables efficient switching operations, with its low VCE(sat) and low gate charge helping to reduce energy losses. Moreover, its high current capacity and cooling-friendly junction temperature make it suitable for the various applications, such as inverters, motor drives, and welding systems. Finally, the IGBT\'s working principle provides insight into how it captures and amplifies the current, enabling precise control.

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