IXBF9N160G

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Introduction

IXBF9N160G is a single, fast and compact insulated-gate bipolar transistor (IGBT) with an integrated freewheeling clamp diode. It is the latest product from IXYS Corporation, which is one of the leading suppliers of IGBTs technology. This product features a low on-state voltage combined with a low drive current for excellent power performance.

Applications

The IXBF9N160G IGBT is designed to meet the most demanding requirements of high frequency power supply, motor drive/control and other high frequency switching applications.

• High frequency DC-DC converters
• Relay applications
• Motor drives/control
• Intelligent power switches
• Demand side management

Features

• Low on-state voltage (VCE(on) = 1.6V @ IC = 12A)
• Low drive current (25A)
• Integrated fast-recovery freewheeling clamp diode
• Protections circuit includes over-temperature protection and undervoltage lockout

Working Principle

The IXBF9N160G is designed as an insulated-gate bipolar transistor (IGBT), which is capable of handling higher current with fewer components than a traditional MOSFET. IGBTs employ two distinct semiconductor junctions, one is an N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and the other is a P-N junction. The IGBT is composed of several layers of insulation material stacked between two collector contact layers. The isolation provided by the insulation material allows a voltage to be applied across the N-Channel MOSFET, which will cause a current to flow through it. At the same time a voltage is applied across the P-N junction, which causes a current to flow through it. The two currents are combined to form a powerful switching action, controlled by the gate voltage.

When executing DC to DC conversion, the IXBF9N160G is usually connected in series with an inductor and a diode. This series combination of devices is then placed across a DC voltage. In this kind of application, the IGBT is turned on, thus connecting the inductor to the DC voltage source and allowing current to flow through it. The diode connected to the IGBT inhibits current flow in either direction, ensuring unidirectional power flow. When the IGBT is turned off, current starts to flow through the diode and is discharged from the circuit. The IXBF9N160G IGBT is a useful device for converting one voltage to another and can do so efficiently at high frequencies.

Conclusion

The IXBF9N160G IGBT is a fast and compact insulated-gate bipolar transistor that is ideal for high frequency switching applications. It has a low on-state voltage which enables it to achieve excellent power performance. Its features include a low drive current, integrated fast-recovery freewheeling clamp diode, and protection circuits against over-temperature and undervoltage lockout. The IXBF9N160G is often used in high frequency DC-DC conversion and motor drive/control applications.

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