IXBX55N300

Series:	BIMOSFET™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	3000V
Current - Collector (Ic) (Max):	130A
Current - Collector Pulsed (Icm):	600A
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 55A
Power - Max:	625W
Switching Energy:	--
Input Type:	Standard
Gate Charge:	335nC
Td (on/off) @ 25°C:	--
Test Condition:	--
Reverse Recovery Time (trr):	1.9µs
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3

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IXBX55N300 application field and working principle.

IXBX55N300 is a single IGBT (Insulated Gate Bipolar Transistor) semiconductor device. The IXBX55N300 has low conduction and switching losses with a fast-switching frequency up to 100 kHz and supply voltages up to 550 V. It is designed for mains switching applications such as AC invertors, motor control, battery charging, and industrial power control. This IGBT is capable of delivering high current with the capability of switching it at high frequencies.

The basic structure of an IGBT consists of two layers of semiconductors, the emitter and the base, which is separated by an insulating layer. The emitter conductivity type is N-type, whereas the base conductivity type is P-type. The device is connected externally with a light source, as well as power supply to drive the electrical load. An IGBT has a terminal, which can be taken as the source and the drain and is responsible for the current flow from the base to the emitter. This feature makes the IGBT unique, compared to other devices, because the gate voltage enables the device to have a high gain capability.

The switching behavior of the IXBX55N300 IGBT is determined by its breakdown voltage, forward voltage drop and turn-on/off time. When a voltage is applied to the gate terminal of the IXBX55N300, a current will flow through the emitter-base junction, leading to the breakdown of the barrier potential and increasing the collector current. The IXBX55N300 has a fast switching speed, which is determined by the time taken for the turn-on/off of the device. To reduce losses, the IXBX55N300 has a low on-state voltage drop and a small thermal resistance. The IXBX55N300 can be operated over a wide temperature range between -40°C and 150°C.

The IXBX55N300 application fields include AC inverter, motor control, power factor correction and power charging. AC inverters, which are used to regulate voltage and current, require high speed switching of IGBTs. Motor control applications require the IXBX55N300 IGBT to deliver high currents and provide high switching speed at high frequencies. The IXBX55N300 is used in power factor correction and power charging applications to control the power factor of a motor or a device by reducing the input current or to charge the battery. The IXBX55N300 is also used in the lighting and home appliance sectors such as compact fluorescent lamps and induction cookers.

The working principle of IXBX55N300 IGBT is related to the gate drive circuit. To turn on the device, a positive gate voltage and a gate current, called gate drive is applied to the base of the device. To turn off the device, a negative gate voltage is applied to the base of the device. As the voltage and current increases, the IXBX55N300 will be turned on. The IXBX55N300 has a fast commutation as it can operate at a frequency of up to hundred kHz. This is due to its low forward voltage drop, which is less than 1.5V. The highest current capacity of an IXBX55N300 IGBT is limited due to its maximum power dissipation at the rated junction temperature. The DC (Direct Current) blocking voltage is the highest voltage an IGBT can withstand without leakage without damage. This voltage is determined by its collector emitter breakdown voltage. It is important to keep the emitter temperature as low as possible in order to avoid junction temperature exceedings.

In conclusion, IXBX55N300 is a single IGBT semiconductor device that is commonly used in applications like AC inverters, motor control, power factor correction, lighting and home appliance. It switching behavior is determined by its breakdown voltage, forward voltage drop and turn-on/off time. The working principle of the IXBX55N300 is related to the gate drive circuit and its maximum current capacity is determined by its maximum power dissipation. Its DC blocking voltage is determined by its collector emitter breakdown voltage. To keep the device running for a long time, the emitter temperature must be kept as low as possible.

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