Allicdata Part #: | IXBX75N170A-ND |
Manufacturer Part#: |
IXBX75N170A |
Price: | $ 31.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1700V 110A 1040W PLUS247 |
More Detail: | IGBT 1700V 110A 1040W Through Hole PLUS247™-3 |
DataSheet: | IXBX75N170A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 28.57680 |
Switching Energy: | 3.8mJ (off) |
Base Part Number: | IXB*75N170 |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 360ns |
Test Condition: | 1360V, 42A, 1 Ohm, 15V |
Td (on/off) @ 25°C: | 26ns/418ns |
Gate Charge: | 358nC |
Input Type: | Standard |
Series: | BIMOSFET™ |
Power - Max: | 1040W |
Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 42A |
Current - Collector Pulsed (Icm): | 300A |
Current - Collector (Ic) (Max): | 110A |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXBX75N170A belongs to a unique type of semiconductor component known as an Insulated Gate Bipolar Transistor (IGBT). Also known as a PNP power transistor, the IXBX75N170A is composed of two separate components: a conductive base (or gate) and an insulated collector-emitter junction. This combination of elements creates a powerful and efficient semiconductor device with a wide range of applications, including automotive, industrial, and consumer electronics.
The IXBX75N170A has a maximum power rating of 75 watts, making it one of the most powerful IGBTs available today. It also has a maximum operating temperature of 175 degrees Celsius, which makes it suitable for use in high-temperature applications.
The working principle of the IXBX75N170A revolves around the breakdown voltage of its base. When the voltage between the base electrode and the collector electrode exceeds a certain threshold, the device triggers a current, allowing electrons to flow from one component to the other. This process is known as avalanche breakdown and is the primary function of an IGBT.
The IXBX75N170A is primarily used as a switch in power circuits, such as those found in hybrids and electric vehicles. Its high switching speeds and low conduction losses make it ideal for these applications. Additionally, its large breakdown voltage and low forward voltage drop make it suitable for motor drives, servo systems, and other high-speed applications.
The IXBX75N170A is also useful in consumer electronics applications. Its low power consumption and excellent efficiency make it an ideal candidate for use in devices such as TVs, computers, tablets, and mobile phones. Also, its high switching speeds make it suitable for digital power supplies.
The IXBX75N170A is an excellent choice for a wide range of applications. Its combination of high power rating, low power consumption, and fast switching speeds make it a popular choice for automotive, industrial, and consumer applications. Its high breakdown voltage also makes it suitable for motor drives, servo systems, and other high-speed applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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