IXDH20N120 Allicdata Electronics
Allicdata Part #:

IXDH20N120-ND

Manufacturer Part#:

IXDH20N120

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 38A 200W TO247AD
More Detail: IGBT NPT 1200V 38A 200W Through Hole TO-247AD
DataSheet: IXDH20N120 datasheetIXDH20N120 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 200W
Base Part Number: IXD*20N120
Supplier Device Package: TO-247AD
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 20A, 82 Ohm, 15V
Td (on/off) @ 25°C: --
Gate Charge: 70nC
Input Type: Standard
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Current - Collector Pulsed (Icm): 50A
Current - Collector (Ic) (Max): 38A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXDH20N120 is an insulated gate bipolar transistor (IGBT) that belongs to the single IGBT family. IGBTs are three-terminal devices that combine the properties of MOSFETs and BJTs. They are sometimes referred to as “uni-polar” devices since the current flow between the collector and emitter electrodes always moves in one direction. The IXDH20N120 IGBT is capable of operating at high frequencies and can be used to switch high power pulses for motor drive applications. The IXDH20N120 was designed for use in applications such as brushless DC motor drives, AC motor drives, HVAC and lamp ballast, UPS and solar inverters, white goods, solar pumps and welding equipment. This device is capable of withstanding high voltage and current densities, making it ideal for high power applications. The IXDH20N120 has a high breakdown voltage, allowing it to be used in applications where high voltage is required. It also has a high current density making it suitable for high power applications. The IXDH20N120 uses an "all-in-one" package form, allowing it to be assembled in tight spaces. It has a maximum blocking voltage of 1200 V and a maximum allowable current of 30 A. The IXDH20N120 also has a fast turn-on and turn-off time, with a maximum on-state voltage drop of 1.8 V at 30 A. This makes it ideal for applications that require fast switching speeds. The working principle of the IXDH20N120 is quite simple. The IGBT is composed of two separate devices: the insulated gate and the bipolar junction transistor (BJT). When a small gate voltage is applied to the IGBT, it controls the flow of current between the collector and the emitter. When the gate voltage is increased to a certain level, the BJT will turn on, allowing current to flow from the collector to the emitter. When the gate voltage is reduced again, the BJT is turned off, preventing current from flowing. The IXDH20N120 is an ideal choice for applications that require high power and high voltage. It is capable of operating at high frequencies and can be used to switch high power pulses for motor drive applications. Its all-in-one package form allows it to be assembled in tight spaces, making it suitable for low profile applications. The IXDH20N120 also has a fast turn-on and turn-off time, making it ideal for applications that require fast switching speeds.

The specific data is subject to PDF, and the above content is for reference

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