![IXDH20N120D1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IXDH20N120D1-ND |
Manufacturer Part#: |
IXDH20N120D1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 38A 200W TO247AD |
More Detail: | IGBT NPT 1200V 38A 200W Through Hole TO-247AD |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 3.1mJ (on), 2.4mJ (off) |
Base Part Number: | IXD*20N120 |
Supplier Device Package: | TO-247AD |
Package / Case: | TO-3P-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 40ns |
Test Condition: | 600V, 20A, 82 Ohm, 15V |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 70nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 200W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 50A |
Current - Collector (Ic) (Max): | 38A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IXDH20N120D1 is an IGBT device specifically designed for high voltage applications. It consists of two IGBT transistors that are connected in series and designed to operate at a high switching frequency. The transistors are connected in an "in series topology" that allows the device to be used to control high-power loads. This device has a maximum current rating of up to 120A. Furthermore, it also has a maximum collector-emitter voltage rating of up to +1200V. It is also capable of operating at switching frequencies up to 40kHz.
IXDH20N120D1 can be used in a variety of power supply, motor control, and switching applications. This device is particularly suitable for applications requiring high voltage and high current performance. Some of the possible applications include motor controls, AC power supply control, power converters and inverters, UPS systems, and electric vehicle control systems. The device can also be used in other high voltage applications such as lighting and power factor correction.
The working principle of IXDH20N120D1 is based on the principles of operation of IGBT transistors. IGBT stands for “Insulated Gate Bipolar Transistor”, a type of semiconductor device used for switching applications. In an IGBT device, a small current applied to the gate terminal controls the flow of current between the collector and the emitter, which is analogous to a switch being turned on and off. The device is also able to provide voltage and current control, allowing for more flexibility in its applications.
The IXDH20N120D1 offers a number of advantages over traditional switching devices such as thyristors, small signal transistors, and MOSFETs. Its high switching frequency and low gate drive requirements reduce losses, while its high current and voltage ratings allow it to be used in high voltage and high power applications. Additionally, the device is able to handle large loads with high accuracy and efficiency.
In conclusion, IXDH20N120D1 is an IGBT device that is designed for high voltage applications. It is capable of operating at high switching frequencies of up to 40kHz and has a maximum collector-emitter voltage rating of up to +1200V. The device can be used in a variety of applications including motor control, AC power supply control, power converters and inverters, UPS systems, and electric vehicle control systems. The working principle of the device is based on the principles of operation of IGBT transistors, which allow for accurate and efficient handling of large loads.
The specific data is subject to PDF, and the above content is for reference
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