| Allicdata Part #: | IXDH35N60BD1-ND |
| Manufacturer Part#: |
IXDH35N60BD1 |
| Price: | $ 4.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 600V 60A 250W TO247AD |
| More Detail: | IGBT NPT 600V 60A 250W Through Hole TO-247AD (IXDH... |
| DataSheet: |  IXDH35N60BD1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 30 +: | $ 4.32579 |
Specifications
| Switching Energy: | 1.6mJ (on), 800µJ (off) |
| Base Part Number: | IXD*35N60 |
| Supplier Device Package: | TO-247AD (IXDH) |
| Package / Case: | TO-3P-3 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 40ns |
| Test Condition: | 300V, 35A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | -- |
| Gate Charge: | 120nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 250W |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 35A |
| Current - Collector Pulsed (Icm): | 70A |
| Current - Collector (Ic) (Max): | 60A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | NPT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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The IXDH35N60BD1 is an insulated gate bipolar transistor, or IGBT, specifically designed for high power switching applications such as motor control and power electronics. It is a single IGBT, meaning that it consists of a single input, single output and single drain-source chip. The IXDH35N60BD1 offers excellent performance with high efficiency and low noise, making it an ideal choice for applications that require high power performance with low operation cost.The IXDH35N60BD1 is designed with a low turn-on voltage and a low on-state voltage drop. This allows it to handle high load currents with excellent efficiency and minimal power loss. In addition, the IXDH35N60BD1 features a low switching loss, which makes it very attractive for applications that require fast switching speeds. Furthermore, the IXDH35N60BD1 features a low thermal resistance, which allows it to stay within its desired operating temperature range even under heavy loads and high switching speeds.The IXDH35N60BD1 has an N-channel output structure. This is a type of construction in which current flows from the drain to the source when a voltage is applied between the gate and source. When the voltage is removed from the gate, the transistor’s output is turned off and the current flow stops. Because the current does not have to pass through the substrate of the transistor, this type of construction is advantageous because it reduces the amount of power lost due to the resistance of the substrate.The IXDH35N60BD1 has a maximum collector-emitter voltage rating of 600 V. This voltage rating is important for applications that require the transistor to handle high voltages, such as motor control and power electronics. As its name suggests, the IXDH35N60BD1 has a drain-source breakdown voltage of 400 V. This means that the transistor can handle a maximum voltage of 400 V between the drain and source terminals before it will begin to break down.The IXDH35N60BD1 also has a low gate threshold voltage. This is the amount of voltage required to turn the transistor on. Having a low gate threshold voltage means that the transistor can be turned on with less power than transistors with higher gate threshold voltages. This is advantageous because it reduces the amount of power required to turn on the transistor, which helps to increase the efficiency of the device.The IXDH35N60BD1\'s conduction losses are minimized thanks to its even distribution of RDS(ON) throughout the chip. This ensures that the channel experiences a uniform amount of resistance when the transistor is on, and that any temperature variations are taken into account. This helps to ensure that the transistor maintains an efficient operation even under varying environmental conditions and workloads.The IXDH35N60BD1 is well suited for applications that require high power performance, such as motor control and power electronics. Its low on-state voltage drop, low gate threshold voltage, low thermal resistance and low conduction losses make it an ideal choice for applications that require high power performance with low operation cost. The IXDH35N60BD1 also has a wide range of operating temperatures, meaning that it can be used in a variety of applications in both extreme and moderate temperature environments.The specific data is subject to PDF, and the above content is for reference
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