IXE611S1T/R

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PMIC - Gate Drivers

The IXE611S1T/R is an IC from Intersil, designed to fit the gate drive requirements for insulated gate bipolar transistors in power factor correction. It provides an output that is capable of driving IGBTs and MOSFETs with high-accuracy current limiting, over-voltage protection and the ability to respond to high-speed switching. Its purpose is to deliver precision current control to the gate drive circuitry, and therefore has a wide range of applications within the power factor correction world.

Applications:

The IXE611S1T/R has a range of application fields as follows:

• Appliances, fluorescent lamps, air conditioners and other household appliances.
• Switching mode power supplies, front end circuits of computers, servers, UPS power supplies, set-top boxes and other equipment.
• Audio equipment.
• Uninterruptible power supplies in private and industrial systems.
• Solar energy.
• Automotive electronics.
• Communication networks.

The IXE611S1T/R can be used in a variety of circuits, such as protection circuits and current limiting circuits, and it offers great accuracy and linear performance in input/output relations.

Working principle:

The IXE611S1T/R is based on power integrated circuit technology, combining a high-current high-voltage MOSFET driver, an IOE (Input Output Error) circuit, and a voltage regulator, all in the same package. With its built-in switching core, it can accurately control the current at the gate terminal, protecting the power device. When needed, it can shut down the gate signal to ensure safe operation, if necessary.

The IXE611S1T/R\'s IOE circuit can detect the voltage fluctuation at the gate of the power device and provides error signals, to adjust the duty cycle of the gate driver, to accurately control the gate drive current. When the output freewheels, the IOE circuit gives a “zero” signal to the MOSFET driver, preventing the so-called “floating current”, which can lead to device failure.

The IXE611S1T/R also features a voltage regulator that is capable of providing a stable voltage to the gate drive circuit and can monitor the output voltage. It has an output range of 10V and a maximum current output of 1A. The output is adjustable, allowing the user to set the desired output voltage.

Conclusion:

The IXE611S1T/R is a versatile IC for use in gate drive applications for insulated gate bipolor transistors (IGBTs) and MOSFETs. It offers many features, such as accurate current limiting, over-voltage protection, and the ability to respond to high speed switching. It also includes protection and monitoring capabilities, making it suitable for a wide range of applications. It is a great choice for power factor correction, as it is highly reliable and accurate.

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