IXGF20N250 Allicdata Electronics
Allicdata Part #:

IXGF20N250-ND

Manufacturer Part#:

IXGF20N250

Price: $ 24.61
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 2500V 23A 100W I4-PAK
More Detail: IGBT 2500V 23A 100W Through Hole ISOPLUS i4-PAC™
DataSheet: IXGF20N250 datasheetIXGF20N250 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
25 +: $ 22.37860
Stock 1000Can Ship Immediately
$ 24.61
Specifications
Power - Max: 100W
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 53nC
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Current - Collector Pulsed (Icm): 105A
Current - Collector (Ic) (Max): 23A
Voltage - Collector Emitter Breakdown (Max): 2500V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction to IXGF20N250

The IXGF20N250 is one of the most commonly used IGBTs, or insulated-gate bipolar transistors. It is a single, N-channel device that is used in various applications, such as motor control, home appliances, and consumer electronics. In addition to its wide range of uses, the IXGF20N250 is also known for its small footprint, high power efficiency, and easy integration into existing applications.

What is an IGBT?

An IGBT, or insulated-gate bipolar transistor, is a type of transistor that consists of two transistors in one. The first transistors is the collector-emitter transistor, which is the part that transfers current. The second transistors is the gate-emitter transistor, which controls the current transferred. This type of transistor is ideal for switching applications, such as motor control, due to its high switching speed and low on-state resistance.

Features and Benefits of IXGF20N250

The IXGF20N250 is a single, N-channel IGBT. It has a forward voltage of 20V, an on-state resistance of 300mOHMS, a maximum junction temperature of 175 Celsius, and a power dissipation of 44 W. It is available in both surface-mount and through-hole packages and has a small footprint for easy integration. In addition, the IXGF20N250 has long term reliability and is protected from current overload, which makes it ideal for applications that require high switching speed and high power efficiency.

IXGF20N250 Application Field and Working Principle

The IXGF20N250 is used in a wide variety of applications, including motor control, home appliances, and consumer electronics. In motor control applications, the IXGF20N250 can be used as a switching device to control the speed or direction of a motor. It is also commonly used as a power switch for appliances and consumer electronics. In addition, the IXGF20N250 can be used as a gate driver in power supply systems to control the current between the primary and secondary side of the system.The working principle of the IXGF20N250 is the same as any other IGBT: when the gate-emitter voltage is applied, the gate junction voltage of the device is increased, and consequently, the current flowing between the collector and emitter is turned on. The current is then modulated by adjusting the voltage at the gate-emitter junction. This modulation of current between the collector and emitter leads to the desired effects in an application.

Conclusion

The IXGF20N250 is an N-channel single IGBT with a wide range of uses and a small footprint, making it ideal for motor control, home appliance, and consumer electronic applications. It is known for its high power efficiency and easy integration into existing applications. Additionally, the IXGF20N250 is reliable and offers protection from current overloads. The IXGF20N250 works by modulating the current between the collector and emitter junctions, which makes it an excellent choice for applications that require fast switching speeds and high power efficiency.

The specific data is subject to PDF, and the above content is for reference

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