| Allicdata Part #: | IXGF36N300-ND |
| Manufacturer Part#: |
IXGF36N300 |
| Price: | $ 33.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 3000V 36A 160W I4-PAK |
| More Detail: | IGBT 3000V 36A 160W Through Hole ISOPLUS i4-PAC™ |
| DataSheet: |  IXGF36N300 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 25 +: | $ 30.27020 |
Specifications
| Power - Max: | 160W |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Package / Case: | i4-Pac™-5 (3 Leads) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | -- |
| Td (on/off) @ 25°C: | -- |
| Gate Charge: | 136nC |
| Input Type: | Standard |
| Switching Energy: | -- |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 5.2V @ 15V, 100A |
| Current - Collector Pulsed (Icm): | 400A |
| Current - Collector (Ic) (Max): | 36A |
| Voltage - Collector Emitter Breakdown (Max): | 3000V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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The IXGF36N300 is a device used for switching large amounts of power and current in the automotive industry. It is a part of the IGBTs (Insulated Gate Bipolar Transistor) single family. It has been introduced to the market as a cost-effective solution for powering applications like electric vehicles, and has become increasingly popular due to its high efficiency and power density.The IXGF36N300 is a 600V, 17A IGBT with an N-shaped chip. It is designed to support switching frequencies up to 24 kHz. It supports peak applied voltage up to 92V and total power dissipation of up to 625W. It can be used in a wide range of applications, such as motor control, power control, and power factor correction.
The IGBTs single family, which the IXGF36N300 is a part of, is designed as a cost-effective solution for high-power applications. It combines the advantages of both MOSFETs and BJTs (bipolar junction transistors), allowing it to provide high levels of efficiency and power density.
The working principle of an IGBT is the same as that of a MOSFET. It uses an insulated gate (IG) to control the flow of electrons from the source to the drain. To turn the device on, a positive voltage is applied to the gate, which attracts electrons from the source to the drain and creates an electric current through the device. To turn the device off, no voltage is applied to the gate. This causes the electrons to return to the source and stops current from flowing through the device.
The IXGF36N300 is a unique device because it has a built-in electrically-controlled Zener diode that helps reduce the device\'s On-State Voltage and improve the device\'s switching performance. This device also has a built-in temperature-compensated body diode that ensures that the temperature of the device remains within an optimal operating temperature range.
Due to its advanced features and its cost-effectiveness, the IXGF36N300 can be used in a variety of applications in the automotive industry, such as in electric vehicles, motor control, and power factor correction. Its high efficiency, power density, and switching frequency makes it a perfect choice for these applications.
In conclusion, the IXGF36N300 is a cost-effective IGBT device from the IGBTs single family that can be used for switching large amounts of power and current in the automotive industry. Its modern design and robust features make it an ideal choice for many different applications. Its built-in Temperature-Compensated Body Diode and Electrically Controlled Zener Diode make it stand out from other devices in its class, making the IXGF36N300 the ideal choice for any application requiring high levels of efficiency and power density.
The specific data is subject to PDF, and the above content is for reference
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