IXGF32N170 Allicdata Electronics

IXGF32N170 Discrete Semiconductor Products

Allicdata Part #:

IXGF32N170-ND

Manufacturer Part#:

IXGF32N170

Price: $ 12.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 44A 200W I4PAC
More Detail: IGBT NPT 1700V 44A 200W Through Hole ISOPLUS i4-PA...
DataSheet: IXGF32N170 datasheetIXGF32N170 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
25 +: $ 10.95270
Stock 1000Can Ship Immediately
$ 12.05
Specifications
Power - Max: 200W
Base Part Number: IXG*32N170
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 1020V, 32A, 2.7 Ohm, 15V
Td (on/off) @ 25°C: 45ns/270ns
Gate Charge: 146nC
Input Type: Standard
Switching Energy: 10.6mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 44A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGF32N170 Transistor (also known as IGBTs) is one of the most commonly used components in applications that require high-power transistors. This transistor has a wide range of uses, and its working principle is relatively simple. The IXGF32N170 is a power MOSFET, which can be used for a variety of applications, including the switching of motors, high-power DC/AC converters, and the use of high-frequency Isolated Alternating Current (IAC).

The IXGF32N170 is a single-gate power metal-oxide-semiconductor field-effect transistor (MOSFET). It utilizes a single gate for controlling the current even of high voltage and high current applications. The MOSFET is capable of switching relatively high currents when compared to other transistors. The single-gate architecture is especially useful for the control of high frequency switching applications.

The IXGF32N170 has two basic modes of operation. The first is the common source mode where the gate is directly connected to the source. In this configuration, the MOSFET acts as a switch. When the gate voltage is higher than the source voltage, then the transistor conducts current, and when the source voltage is higher than the gate voltage, the device does not conduct. This mode of operation is typically used for applications that require high power switching. The other mode is a common drain configuration. In this setup, the MOSFET acts as an amplifier, raising the gain by transferring the input signal (gate voltage) to the output.

The IXGF32N170 is one of the most commonly used transistors in high-power applications. It has a wide range of uses, from switching high-power motors to high-frequency IAC control. Its single-gate architecture enables the device to accurately control high voltage and high current applications, making it ideal for any application requiring reliable, efficient power MOSFETs.

The IXGF32N170 has a wide range of applications, covering a variety of industries and application fields. Some of the most common applications for the IXGF32N170 are automotive, industrial, and consumer electronics. In the automotive industry, it is commonly used in various motor control systems, such as switchover systems, motor drive systems, and powertrain control units. In the industrial sector, it can be found in high-power converters and in a variety of circuit boards and systems. In consumer electronics, the IXGF32N170 can be used for the control of motor speed and acceleration. It is also used in solar panels and various high-frequency circuits.

The IXGF32N170 is a powerful transistor that is incredibly reliable and efficient in a variety of applications. Its single-gate architecture and high frequency capabilities make it ideal for high power applications, and its wide range of applications make it suitable for nearly any application that requires a power MOSFET.

The specific data is subject to PDF, and the above content is for reference

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