IXGF32N170 Discrete Semiconductor Products |
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Allicdata Part #: | IXGF32N170-ND |
Manufacturer Part#: |
IXGF32N170 |
Price: | $ 12.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1700V 44A 200W I4PAC |
More Detail: | IGBT NPT 1700V 44A 200W Through Hole ISOPLUS i4-PA... |
DataSheet: | IXGF32N170 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
25 +: | $ 10.95270 |
Power - Max: | 200W |
Base Part Number: | IXG*32N170 |
Supplier Device Package: | ISOPLUS i4-PAC™ |
Package / Case: | i4-Pac™-5 (3 Leads) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 1020V, 32A, 2.7 Ohm, 15V |
Td (on/off) @ 25°C: | 45ns/270ns |
Gate Charge: | 146nC |
Input Type: | Standard |
Switching Energy: | 10.6mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 32A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 44A |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXGF32N170 Transistor (also known as IGBTs) is one of the most commonly used components in applications that require high-power transistors. This transistor has a wide range of uses, and its working principle is relatively simple. The IXGF32N170 is a power MOSFET, which can be used for a variety of applications, including the switching of motors, high-power DC/AC converters, and the use of high-frequency Isolated Alternating Current (IAC).
The IXGF32N170 is a single-gate power metal-oxide-semiconductor field-effect transistor (MOSFET). It utilizes a single gate for controlling the current even of high voltage and high current applications. The MOSFET is capable of switching relatively high currents when compared to other transistors. The single-gate architecture is especially useful for the control of high frequency switching applications.
The IXGF32N170 has two basic modes of operation. The first is the common source mode where the gate is directly connected to the source. In this configuration, the MOSFET acts as a switch. When the gate voltage is higher than the source voltage, then the transistor conducts current, and when the source voltage is higher than the gate voltage, the device does not conduct. This mode of operation is typically used for applications that require high power switching. The other mode is a common drain configuration. In this setup, the MOSFET acts as an amplifier, raising the gain by transferring the input signal (gate voltage) to the output.
The IXGF32N170 is one of the most commonly used transistors in high-power applications. It has a wide range of uses, from switching high-power motors to high-frequency IAC control. Its single-gate architecture enables the device to accurately control high voltage and high current applications, making it ideal for any application requiring reliable, efficient power MOSFETs.
The IXGF32N170 has a wide range of applications, covering a variety of industries and application fields. Some of the most common applications for the IXGF32N170 are automotive, industrial, and consumer electronics. In the automotive industry, it is commonly used in various motor control systems, such as switchover systems, motor drive systems, and powertrain control units. In the industrial sector, it can be found in high-power converters and in a variety of circuit boards and systems. In consumer electronics, the IXGF32N170 can be used for the control of motor speed and acceleration. It is also used in solar panels and various high-frequency circuits.
The IXGF32N170 is a powerful transistor that is incredibly reliable and efficient in a variety of applications. Its single-gate architecture and high frequency capabilities make it ideal for high power applications, and its wide range of applications make it suitable for nearly any application that requires a power MOSFET.
The specific data is subject to PDF, and the above content is for reference
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