IXGM17N100A Allicdata Electronics
Allicdata Part #:

IXGM17N100A-ND

Manufacturer Part#:

IXGM17N100A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: POWER MOSFET TO-3
More Detail: IGBT 1000V 34A 150W Through Hole TO-204AE
DataSheet: IXGM17N100A datasheetIXGM17N100A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Supplier Device Package: TO-204AE
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 200ns
Test Condition: 800V, 17A, 82 Ohm, 15V
Td (on/off) @ 25°C: 100ns/500ns
Gate Charge: 120nC
Series: --
Switching Energy: 3mJ (off)
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Current - Collector Pulsed (Icm): 68A
Current - Collector (Ic) (Max): 34A
Voltage - Collector Emitter Breakdown (Max): 1000V
IGBT Type: --
Part Status: Last Time Buy
Description

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Introduction

IXGM17N100A is an IGBT (Insulated Gate Bipolar Transistor) semiconductor developed by IXYS Corporation. It is a single type of transistor and has a wide range of application fields. This article will introduce the working principle and application field of IXGM17N100A.

Working Principle

IGBT is an advanced power switch, which consists of an insulated gate bipolar transistor (IGBT) module. The inherent characteristics of an IGBT make it ideal for high switching frequency and high voltage applications.IGBTs are capable of fast switching operations due to its low saturation voltage and low forward voltage drop. As a result, it is often used in motor control applications where fast switching is required. An IGBT also has a high level of thermal stability, due to its gate electrode insulation, which enables it to handle high temperature operation.For the IXGM17N100A, its specific IGBT module consists of an N-channel Depletion-mode MOSFET and an N-channel Enhancement-mode MOSFET integrated into a single chip. Its maximum drain current is 100A and the maximum voltage is 1200V. Its switching time is very short and can reach 50 nanoseconds.

Application Field

Due to its high performance and reliability, IXGM17N100A is widely used in industrial, automotive, aerospace and solar energy application fields.In industrial application, IXGM17N100A is suitable for a broad range of motor drive and control systems, such as servo motor control, speed control, elevators. It is also used in domestic appliances, such as refrigerators, washing machines, air conditioners.In automotive application, IXGM17N100A is well-suited for automotive lighting systems, fuel injection systems, air conditioners and electric motor drives.IXGM17N100A is also used in aerospace. It can be applied to variable speed drives, engine control systems and power supplies for flight systems.IXGM17N100A is also used in solar energy application field. It can be used in the power units of high power solar panels and solar power storage systems.

Conclusion

IXGM17N100A is a single type of IGBT developed by IXYS Corporation which has a wide range of application fields. Its specific IGBT module consists of an N-channel Depletion-mode MOSFET and an N-channel Enhancement-mode MOSFET integrated into a single chip. Due to its high performance and reliability, IXGM17N100A is widely used in industrial, automotive, aerospace and solar energy application fields.

The specific data is subject to PDF, and the above content is for reference

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