Allicdata Part #: | IXGM20N60-ND |
Manufacturer Part#: |
IXGM20N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | IGBT 600V 40A 150W Through Hole TO-204AE |
DataSheet: | IXGM20N60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Input Type: | Standard |
Supplier Device Package: | TO-204AE |
Package / Case: | TO-204AE |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 200ns |
Test Condition: | 480V, 20A, 82 Ohm, 15V |
Td (on/off) @ 25°C: | 100ns/600ns |
Gate Charge: | 120nC |
Series: | -- |
Switching Energy: | 2mJ (on), 3.2mJ (off) |
Power - Max: | 150W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Part Status: | Last Time Buy |
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The IXGM20N60 is an insulated gate bipolar transistor (IGBT), which is a type of power semiconductor. It is specifically a monolithic IGBT, which is an active component that functions as both a transistor and an integrated circuit. The IXGM20N60 is considered a single IGBT. It has a voltage rating of 600V and a current rating of 20A.
The IXGM20N60 is an extremely versatile component that can be used for many different applications. It stands out for its ability to provide fast switching, high currents, and low-loss operation. It is commonly used in the automotive industry, home appliances, and power tools, but it is also useful for applications like Power over Ethernet, motor drives, and renewable energy systems.
The IGBT works differently than other types of power semiconductors, such as BJTs or MOSFETs. It uses an insulated gate to control current conduction, which means that the input-to-output characteristics are voltage-dependent and not current-dependent. This means that the gate is protected from high voltages and the device operates at more consistent performance levels.
The IXGM20N60 is a three-terminal device that has two gate terminals and two collector terminals. The gate terminal is used to control the switch. When a positive voltage is applied to the gate, it causes the transistor to conduct current in the collector-emitter terminals. When the voltage is removed, the transistor will revert to its off-state. The current gain of the device is dependent on the amount of voltage applied to the gate.
The IGBT is an advantageous technology due to its ability to switch and carry large currents quickly and efficiently. Its fast switching speeds and low saturation voltages are desirable for many applications, such as switching power supplies, motor drives, and renewable energy systems. Its high current rating makes it suitable for high-power applications, such as industrial power systems. The IXGM20N60 has a lower ON resistance than other IGBTs, allowing for higher switching performance.
Overall, the IXGM20N60 is an efficient, reliable, and cost-effective power semiconductor that is suitable for a variety of applications. Its fast switching speeds, high current rating, and low ON resistance make it a preferred choice for many digital and power electronics applications. It is an ideal power transistor for projects that require high-speed switching, high current, and low saturation voltage.
The specific data is subject to PDF, and the above content is for reference
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