IXGM25N100A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IGBT is short for insulated gate bipolar transistor, which is a type of power transistor that combines the characteristics of both MOSFETs and bipolar junction transistors (BJTs). IXGM25N100A is a type of IGBT with very high breakdown voltage and moderate conduction loss. It is suitable for applications such as small power inverters, AC-DC switching power supplies, mains frequency servo drive, AC motor control and adjustable speed DC motor control. This article will discuss the application field and working principle of IXGM25N100A.

Application field of IXGM25N100A

IXGM25N100A has very good electrical performance, such as low on-state resistance, high breakdown voltage and low power consumption. Therefore, it can be used in a variety of motor control and power conversion applications. It can be used for small power inverters and AC-DC switching power supplies, such as those used in electric vehicles, home appliances, and electric tools to reduce losses and increase efficiency. It can also be used in mains frequency servo drive and AC motor control, such as three-phase servo systems, brushless DC motor drives, and high-power speed regulation systems. In addition, IXGM25N100A can also be used in adjustable speed DC motor control applications.

Working principle of IXGM25N100A

The working principle of IXGM25N100A is based on the principle of MOSFETs and BJT’s. When the gate voltage is applied, the electrons in the MOS channel will be accelerated by the gate electric field, thus reducing the resistance between the source and drain, and the MOSFET is in the on-state. At the same time, the large current flows through the P type base layer and forms an avalanche effect. This causes the PN junction to break down, so that C-E junction is in a saturable state. Therefore, IXGM25N100A has both the advantages of high-voltage operation characteristic of the BJT and the advantages of the small on-state resistance and fast switching speed of MOSFETs.

In fabricating IXGM25N100A, the three terminals of the transistor are connected to the same N type substrate. The gate terminal is connected to a P type isolation layer, which is electrically insulated from the N type substrate by a thin layer of silicon dioxide. The purpose of the P type isolation layer is to prevent the gate voltage from directly affecting the behind of the N type substrate and to achieve electrical isolation, thus achieving high breakdown voltage and high reliability. The Trench Gate Technology is adopted in the design of the structure, so that IXGM25N100A has a low on-state resistance and a low switching loss.

Conclusion

IXGM25N100A is a type of IGBT with high breakdown voltage and moderate conduction loss. It is suitable for applications such as small power inverters, AC-DC switching power supplies, mains frequency servo drive, AC motor control and adjustable speed DC motor control. The working principle of IXGM25N100A is based on the principle of MOSFETs and BJTs and the Trench Gate Technology is adopted in the design of the structure. Therefore, IXGM25N100A has both the advantages of high-voltage operation characteristic of the BJT and the advantages of the small on-state resistance and fast switching speed of MOSFETs.

The specific data is subject to PDF, and the above content is for reference