IXS839S1T/R Allicdata Electronics
Allicdata Part #:

IXS839S1T/R-ND

Manufacturer Part#:

IXS839S1T/R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC MOSFET DRIVER SYNC BUCK 8SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: IXS839S1T/R datasheetIXS839S1T/R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 2A, 4A
Base Part Number: IXS839
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 20ns, 15ns
High Side Voltage - Max (Bootstrap): 24V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2V
Voltage - Supply: 4.5 V ~ 5.5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IXS839S1T/R PMIC - Gate Driver is a 3-amp gate driver with integrated charge pump, ideal for driving medium- to high-power MOSFETs, IGBTs, and bipolar transitors. It features a low on-resistance, designed to provide fast switching of high-current loads. The IXS839S1T/R is designed to provide low input noise, high efficiency, and high thermal performance, resulting in a reliable and cost effective solution.

The IXS839S1T/R is the ideal driver for applications such as solar inverters, ac motor drives, chargers and DC to DC converters, wireless power systems, and high power industrial motor control. It is available in a surface mountable, low profile QFN8 package, which is ideal for applications with electronics operating in high temperatures. The maximum operating temperature of the IXS839S1T/R is 125°C, making it capable of withstanding high temperatures for extended periods of time.

The IXS839S1T/R provides 3 D-CAP3™ modes, allowing the output current to be optimized for each individual application. The IXS839S1T/R also features a HYST notch that provides necessary undervoltage lockout protection during switching transients. This ensures a reliable operation in power systems, which are often subject to power supply ripple.

The IXS839S1T/R’s integrated charge pump increases its gate source voltage to reduce MOSFET and IGBT gate resistances. This helps reduce the gate charge required to switch the high current MOSFETs or IGBTs, enabling higher switching frequencies and providing improved efficiency. The charge pump also eliminates the need for an external bias supply and allows the IXS839S1T/R to be used with a single gate driver supply.

The IXS839S1T/R features a diagnostic system that allows the user to monitor peak current. It also features an auto-recovery short circuit protection (SCS), which allows the driver to automatically recover from short circuit faults and allows the application to resume normal operation automatically. This feature helps reduce the complexity of customer design and ensures reliable operation.

The IXS839S1T/R also features an integrated glue logic that allows two signals to be used as inputs, one to control the outputs and one to reset the outputs. This helps simplify applications where the outputs need to be reset after a predetermined period of time.

The IXS839S1T/R is a high performance, cost effective, and extremely reliable solution for driving MOSFETs, IGBTs, and bipolar transitors in medium to high power applications. Its built-in diagnostics, short circuit protection, and low input noise make it an ideal driver for any medium to high power application.

The specific data is subject to PDF, and the above content is for reference

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