
Allicdata Part #: | IXSN35N120AU1-ND |
Manufacturer Part#: |
IXSN35N120AU1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 70A 1200V SOT-227B |
More Detail: | IGBT Module PT Single 1200V 70A 300W Chassis Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 750µA |
Base Part Number: | IXS*35N120 |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 3.9nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 4V @ 15V, 35A |
Power - Max: | 300W |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Single |
IGBT Type: | PT |
Part Status: | Obsolete |
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IXSN35N120AU1 Application Field and Working Principle
The IXSN35N120AU1 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. The module features a current rating of up to 35A and a voltage rating of up to 1200V. The module is available in a variety of packages, including SMD, TO-263 and TO-220, and can be used in a wide range of applications, such as motor control, inverter, smart grids and power supplies.
A typical IGBT module is formed through the integration of an IGBT die and a diode die. It combines the advantages of both of these elements, allowing for high-speed switching and improved current density. The module is designed to reduce the size of the circuit, reduce assembly complexity, and improve power dissipation.
How Does it Work?
The basic principle of operation of an IGBT module is similar to that of a traditional MOSFET. However, an IGBT module has the added advantage of providing a higher peak current and faster switching speeds. The module typically has an emitter (source) terminal, an emitter-gate terminal and a collector terminal (drain). When a forward bias voltage is applied between the emitter and collector, the current is able to flow from the emitter to the collector. The IGBT also uses a gate-induced voltage to control the turning-on and -off of the current.
Applications of IXSN35N120AU1
The IXSN35N120AU1 is used in many different types of applications. It is commonly used in motor control, inverters, smart grids and power supplies. In motor control applications, it can be used to provide a high-speed, low-loss power switch. This makes it ideal for controlling the speed and torque of a motor, as well as providing precise control over the motor’s operation. In inverter and power supply applications, the IXSN35N120AU1 can be used to provide robust and efficient power conversion. It is also well suited to smart grid systems, where its wide operating range and high efficiency can be used to ensure reliable operation in the most demanding of environments.
Conclusion
The IXSN35N120AU1 is a versatile IGBT module that can be used in a wide range of applications. It provides high-speed switching and improved current density, as well as robust and efficient power conversion. It is an ideal choice for motor control, power supplies, inverters, and smart grids.
The specific data is subject to PDF, and the above content is for reference
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