Allicdata Part #: | IXSN62N60U1-ND |
Manufacturer Part#: |
IXSN62N60U1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 90A 600V SOT-227B |
More Detail: | IGBT Module PT Single 600V 90A 250W Chassis Mount ... |
DataSheet: | IXSN62N60U1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 90A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 50A |
Current - Collector Cutoff (Max): | 750µA |
Input Capacitance (Cies) @ Vce: | 4.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXSN62N60U1 is an Insulated Gate Bipolar Transistor(IGBT) module. This device is based on the IGBT technology, which means it has two switching modes. It is an advanced technology that combines the features of a MOSFET and a BJT, making it suitable for many applications.
The IXSN62N60U1 has a maximum voltage rating of 600V and a current rating of 6A. It is a reliable device that provides enhanced system performance and efficiency. It is suitable for applications such as inverter, motor drives, uninterruptible power supplies (UPS), and converters.
The working principle of the IXSN62N60U1 is based on the idea of an insulated gate bipolar transistor (IGBT). This type of transistor has two different modes, one of which is the blocked mode, where the gate-source voltage is forced to be higher than what is normally permitted by the gate oxide. This allows the drain-source current to be blocked, thus preventing any electrical current from passing through.
The other mode is the conducting mode, which allows the drain-source current to pass through, thus allowing the device to switch on or off. In this mode, the gate-source voltage is lower than what is normally allowed by the gate oxide. This causes the drain-source voltage to drop, thus turning on the device and allowing electrical current to flow.
The IXSN62N60U1 offers a variety of features that make it suitable for a wide range of applications. Some of the features include low standby losses, robust construction, and high efficiency. In addition, it has a high surge capability, making it ideal for applications that require surges in current or voltage.
Furthermore, the IXSN62N60U1 offers a fast switching speed, which makes it suitable for applications where high speed is important. It also offers protection against overvoltage, undervoltage, and overcurrent, which provide additional safety and reliability. Finally, the device is suitable for automated production lines and robotic systems, as it is easy to program and control.
In summary, the IXSN62N60U1 is a highly reliable and efficient IGBT module that is suitable for a wide range of applications. Its two switching modes, advanced features, and protection against overvoltage, undervoltage, and overcurrent make it a reliable choice for those looking for a reliable and efficient device.
The specific data is subject to PDF, and the above content is for reference
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