IXSN52N60AU1 Allicdata Electronics
Allicdata Part #:

IXSN52N60AU1-ND

Manufacturer Part#:

IXSN52N60AU1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT FRD 600V 80A SCSOA SOT227B
More Detail: IGBT Module PT Single 600V 80A 250W Chassis Mount ...
DataSheet: IXSN52N60AU1 datasheetIXSN52N60AU1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Description

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The IXSN52N60AU1 is a 3-phase IGBT module from SEMIKRON featuring an innovative Zero Latch interlock system, thermal resistor and extra fast DBC film. It is specifically designed for high current applications such as motor drives and power supplies. This module is equipped with a built-in Anti-Parallel Diode (APD) and its wide voltage range makes it suitable for diverse applications.

The IXSN52N60AU1 is built on SEMIKRON’s cutting-edge OptiMOS® technology. The module is configured as an N-channel IGBT with a built-in Anti-Parallel Diode. It has a maximum collector current of 52A and a 3-phase bridge with a maximum average current of 135A. The module operates in a wide voltage range of 600 to 1200V, providing a very flexible selection to best suit any application. It also features extra fast DBC substrate and minimal switching losses, allowing for higher efficiency and higher power density.

The IXSN52N60AU1 employs SEMIKRON\'s unique Zero Latch system. This feature prevents IGBTs from entering into the interlock latch mode due to overcurrent or short circuit. If a short-circuit fault occurs, the module will reduce the gate drive current for the IGBTs, providing a quick, safe and easy recovery from the fault. Thermal resistance is also reduced, as compared to a standard gate drive configuration. This feature also eliminates the need for external gate dampening components, which results in cost and size savings.

This module also incorporates a thermal resistor. The integrated thermal resistor measures the junction temperature of the IGBTs and is used to maintain the junction temperature within the specified range. This reduces the risk of thermal runaway and increases reliability. In addition, this module also features extra fast DBC film, which is used to enhance the thermal and electrical characteristics of the module.

In summary, the IXSN52N60AU1 is a module specifically designed for high current applications such as motor drives and power supplies. It employs SEMIKRON’s unique Zero Latch system, and also comes with built-in Anti-Parallel Diode, wide voltage range and extra fast DBC film. The integrated thermal resistor helps maintain the junction temperature within the specified range, making the module ideal for reliable operation in diverse applications.

The specific data is subject to PDF, and the above content is for reference

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