Allicdata Part #: | IXSR35N120BD1-ND |
Manufacturer Part#: |
IXSR35N120BD1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 70A 250W ISOPLUS247 |
More Detail: | IGBT PT 1200V 70A 250W Through Hole ISOPLUS247™ |
DataSheet: | IXSR35N120BD1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | 5mJ (off) |
Base Part Number: | IXS*35N120 |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 40ns |
Test Condition: | 960V, 35A, 2.7 Ohm, 15V |
Td (on/off) @ 25°C: | 36ns/160ns |
Gate Charge: | 120nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 35A |
Current - Collector Pulsed (Icm): | 140A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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IXSR35N120BD1 is a single IGBT (Insulated-Gate Bipolar Transistor) designed for low-loss, fast switching applications. This IGBT has excellent gate-emitter dV/dt rate, minimum cross-conduction loss and low switching time. It is an ideal device for various switching applications such as in motor control systems and inverters.
An IGBT is an energy-efficient device which combines the advantages of a bipolar transistor and a field-effect transistor. It is capable of switching large amounts of electrical current with low power loss and has a high breakdown voltage. The IXSR35N120BD1 has an integrated body diode as an additional protection feature against inductive loads.
The IXSR35N120BD1 is a press-pack type IGBT which offers performance, convenience and easy mounting in the user circuit. This devices voltage-blocking capability ranges from 50V to 1200V, with a nominal current of 35A. Its maximum junction temperature is 150 Celsius and its maximum second breakdown current is 100A.
The application fields for IXSR35N120BD1 are mainly motor control and inverter systems. This device is suitable for both small-scale and large-scale motor control systems and can be used to switch the power output in inverters. In addition, IXSR35N120BD1 can be used in various other applications such as uninterruptible power supplies, UPS, solar power inverter and UPS systems.
The working principle of IXSR35N120BD1 is relatively simple. When the gate voltage is applied to the device, the electrons are attracted to the gate and the current in the emitter-collector junction increases. This creates a voltage drop across the emitter-collector junction, which applies a reverse bias across the junction. As the current through the junction increases, the bipolar transistor switches off and the IGBT is activated.
Once the IGBT is activated, the current flow from the collector to the emitter increases, resulting in an increase in voltage across the IGBT. This voltage needs to be greater than the Vce(sus) for the IGBT to remain activated. If the voltage falls below the Vce(sus), the IGBT will switch off.
The IXSR35N120BD1 is a high-performance IGBT ideal for switching applications such as motor control systems and inverters. It has excellent gate-emitter dV/dt rate and low switching time. This IGBT can be used in various applications, ranging from UPS and solar power inverter systems to large-scale motor control systems.
The specific data is subject to PDF, and the above content is for reference
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