
Allicdata Part #: | IXSR40N60CD1-ND |
Manufacturer Part#: |
IXSR40N60CD1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 62A 210W ISOPLUS247 |
More Detail: | IGBT PT 600V 62A 210W Through Hole ISOPLUS247™ |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | 1mJ (off) |
Base Part Number: | IXS*40N60 |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 35ns |
Test Condition: | 480V, 40A, 2.7 Ohm, 15V |
Td (on/off) @ 25°C: | 50ns/70ns |
Gate Charge: | 190nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 210W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 62A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXSR40N60CD1 transistor is part of the family of insulated gate bipolar transistors (IGBTs), a type of power semiconductor chip, which often referred to as an electric switch. As part of the single series of IGBTs, the IXSR40N60CD1 can be used to switch DC and AC electric signals both on and off quickly, but at a lower cost than devices such as MOSFETs, which are also used in this capacity.
The IXSR40N60CD1 transistor is used primarily in power electronics circuits, such as in motor controls, induction heating circuits, welding, electric utility switching and solar arrays. It is best suited for applications involving higher power levels, up to 600V, and offers the advantages of faster switching, low drive loss and robust reliability.
The IXSR40N60CD1 contains two independent IGBT chips, each mounted in a clip-on plastic housing. It is designed to be controlled by a single-ended gate drive and provides an output current of up to 50A RMS when a 30V gate drive voltage is applied. When the gate drive voltage is removed, the IXSR40N60CD1 returns to its original OFF state.
The working principle of the IXSR40N60CD1 is based on its insulated gate structure. It contains both an insulated gate and a p-n junction structure. In this way, the conduction of current can be controlled by the device through the manipulation of the gate voltage. This allows it to switch on or off with the input of a voltage or current signal.
The IXSR40N60CD1 also has a low on-state voltage drop and a low saturation voltage. This allows it to handle power loads more efficiently, with less power loss. It also has increased immunity to electrical noise, making it an ideal choice for applications where power integrity and noise suppression are important considerations.
In addition to its primary uses, the IXSR40N60CD1 can be used in a variety of other applications, including power supplies, solar cell inverters, UPS systems and motor control. It has also found applications in industrial robotics and automotive electronics. Its high switching speed and low on-state voltage drop make it an excellent choice for applications requiring fast, reliable operation.
The IXSR40N60CD1 transistor is a high-efficiency and robust IGBT device. It is highly efficient in power electronics circuits and applications, offering fast switching and reliable operation at a lower cost than other power semiconductor chips. It also provides an insulated gate structure to provide increased noise immunity and a low on-state voltage drop for greater efficiency. By understanding the device’s application field and working principle, users can take advantage of its potential for their particular application requirements.
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