IXSR50N60BU1

Series:	--
Packaging:	Tube
Part Status:	Obsolete
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Vce(on) (Max) @ Vge, Ic:	--
Switching Energy:	--
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	ISOPLUS247™
Supplier Device Package:	ISOPLUS247™
Base Part Number:	IXS*50N60

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Introduction
The IXSR50N60BU1 is a single IGBT, a kind of transistor used in power applications. It has a design optimized for switching speed, ultra low loss and maximum efficiency. This device is designed to withstand a voltage as high as 1500V, making it suitable for power circuit applications that require superior performance. This article explains the various application fields of the IXSR50N60BU1 and its working principle.Application Field
The IXSR50N60BU1 is suitable for a wide array of power switching applications. It is foundational in high speed switching applications and low-loss inverters. It is suitable for AC/DC inverters, high frequency converters for telecom applications, power converters for computers, and high-power switch devices for UPSs and general-purpose applications ranging from small- to medium-sized machines to high-end equipment such as hybrid vehicles.Advantages
The IXSR50N60BU1 offers numerous advantages. It has an optimized electrical performance for low conduction losses, with a high voltage of 1500V and a low drain-source on-state resistance of 8.4mΩ. It also offers superior thermal performance, with a high junction temperature coefficient (JTC) of -22°C/mA and low thermal runaway. Furthermore, it has an impressive cycling life at high temperatures, with a 1000-hour life at 175°C. This makes it well-suited for high reliability applications.Working Principle
The IXSR50N60BU1 is based on the insulated-gate bipolar transistor (IGBT) structure. This structure combines the best of both bipolar junction transistor (BJT) and MOSFET technologies, offering low conduction losses, high input impedance, and fast switching speeds. The working principle of this device is based on two main components, the gate and the collector. When a voltage is applied to the gate, current flows through the collector and creates a conducting channel between the source and the drain. By controlling the voltage across the gate and the collector, the amount of current conducted can be precisely regulated.Conclusion
The IXSR50N60BU1 is a single IGBT optimized for fast switching, low-loss, and high efficiency. It is suitable for a wide range of power applications, such as AC/DC inverters, high frequency converters, and power converters, among other applications. It is also designed to operate in extreme temperatures, with a high voltage of 1500V and a low drain-source on-state resistance of 8.4mΩ. The working principle of this device is based on the insulated-gate bipolar transistor structure, combining the best of both BJT and MOSFET technologies.

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