
Allicdata Part #: | IXST30N60CD1-ND |
Manufacturer Part#: |
IXST30N60CD1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 55A 200W TO268 |
More Detail: | IGBT 600V 55A 200W Surface Mount TO-268 |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | 700µJ (off) |
Base Part Number: | IXS*30N60 |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 50ns |
Test Condition: | 480V, 30A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 30ns/90ns |
Gate Charge: | 100nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 200W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 110A |
Current - Collector (Ic) (Max): | 55A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IGBT(insulated gate bipolar transistor) is a power semiconductor device typically used for the purpose of powering important industrial applications. The IXST30N60CD1 is one such type of IGBT, specifically, a 600V single IGBT, which has a rated current of 30A. This device is very popular in a number of different applications, including motor control applications and power electronic circuits.
The primary benefit of using IGBTs is their low switching speed. This allows them to be utilized in a variety of high power applications, such as DC-Link inverters, rectifiers, and switching regulators. Additionally, IGBTs can also be used in high frequency applications, such as frequency inverters and voltage sources. In particular, the IXST30N60CD1 has a fast short circuit and over-current protection, meaning that it is well suited for those applications in which a high level of protection is required.
Although the IXST30N60CD1 is a relatively high-power device, it still requires a relatively low amount of current. This is because of its low on-state voltage drop, which is only 2V at full load. This makes the IXST30N60CD1 an ideal solution for applications where energy efficiency is key, as it reduces the amount of energy lost due to switching losses. Furthermore, the IXST30N60CD1 has a high voltage blocking capability, which is up to 600V, meaning that it can be used for applications that require higher voltage levels.
The working principle of the IXST30N60CD1 IGBT is fairly straightforward. When current is applied across the device, the metal-oxide-semiconductor (MOS) layer on the gate produces a charge, which in turn attracts electrons in the n-type material. This creates a conducting channel between the positive and negative terminals, allowing current to flow. The charge in the MOS layer is then used to regulate the amount of current that passes through the device, thus allowing it to act as an efficient switching device.
In conclusion, the IXST30N60CD1 is a particularly useful type of power semiconductor device. It has a high voltage blocking capability, low on-state voltage drop and fast short circuit and over-current protection, which make it ideal for numerous applications. It also works on a simple principle, allowing it to be easily integrated into various types of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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