IXST30N60CD1 Allicdata Electronics
Allicdata Part #:

IXST30N60CD1-ND

Manufacturer Part#:

IXST30N60CD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 55A 200W TO268
More Detail: IGBT 600V 55A 200W Surface Mount TO-268
DataSheet: IXST30N60CD1 datasheetIXST30N60CD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 700µJ (off)
Base Part Number: IXS*30N60
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 50ns
Test Condition: 480V, 30A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 30ns/90ns
Gate Charge: 100nC
Input Type: Standard
Series: --
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Current - Collector Pulsed (Icm): 110A
Current - Collector (Ic) (Max): 55A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBT(insulated gate bipolar transistor) is a power semiconductor device typically used for the purpose of powering important industrial applications. The IXST30N60CD1 is one such type of IGBT, specifically, a 600V single IGBT, which has a rated current of 30A. This device is very popular in a number of different applications, including motor control applications and power electronic circuits.

The primary benefit of using IGBTs is their low switching speed. This allows them to be utilized in a variety of high power applications, such as DC-Link inverters, rectifiers, and switching regulators. Additionally, IGBTs can also be used in high frequency applications, such as frequency inverters and voltage sources. In particular, the IXST30N60CD1 has a fast short circuit and over-current protection, meaning that it is well suited for those applications in which a high level of protection is required.

Although the IXST30N60CD1 is a relatively high-power device, it still requires a relatively low amount of current. This is because of its low on-state voltage drop, which is only 2V at full load. This makes the IXST30N60CD1 an ideal solution for applications where energy efficiency is key, as it reduces the amount of energy lost due to switching losses. Furthermore, the IXST30N60CD1 has a high voltage blocking capability, which is up to 600V, meaning that it can be used for applications that require higher voltage levels.

The working principle of the IXST30N60CD1 IGBT is fairly straightforward. When current is applied across the device, the metal-oxide-semiconductor (MOS) layer on the gate produces a charge, which in turn attracts electrons in the n-type material. This creates a conducting channel between the positive and negative terminals, allowing current to flow. The charge in the MOS layer is then used to regulate the amount of current that passes through the device, thus allowing it to act as an efficient switching device.

In conclusion, the IXST30N60CD1 is a particularly useful type of power semiconductor device. It has a high voltage blocking capability, low on-state voltage drop and fast short circuit and over-current protection, which make it ideal for numerous applications. It also works on a simple principle, allowing it to be easily integrated into various types of electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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