IXST40N60B Allicdata Electronics
Allicdata Part #:

IXST40N60B-ND

Manufacturer Part#:

IXST40N60B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 280W TO268
More Detail: IGBT PT 600V 75A 280W Surface Mount TO-268
DataSheet: IXST40N60B datasheetIXST40N60B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 280W
Base Part Number: IXS*40N60
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 40A, 2.7 Ohm, 15V
Td (on/off) @ 25°C: 50ns/110ns
Gate Charge: 190nC
Input Type: Standard
Switching Energy: 1.8mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXST40N60B is a kind of transistor which falls under the category of Insulated-Gate Bipolar Transistor or IGBTs. It is a single IGBT, which means that it is composed of a single transistor without any additional electronics or components. This type of transistor is often used in applications where the current or voltage must be controlled precisely. This transistor can be used in a wide variety of applications such as switching, power conversion and adjustable speed drives. It is also often used in motor control circuits due to its high switching frequency.

The IXST40N60B is often referred to as a “metal-oxide-semiconductor” (MOS) device as it functions similarly to MOSFETs, but with higher switching rates and more power. It is a voltage-controlled device, meaning that by applying a voltage to its gate, the current flowing through the transistor can be controlled. The IXST40N60B can handle high voltages and currents and can operate at high temperatures. In addition, it has very low losses due to its low on-state resistance and can be used in a variety of different applications including power supplies and motor control.

The working principle of the IXST40N60B is as follows. The transistor is composed of an emitter, a base and a collector. When a positive voltage is applied to the base, the current flowing across the transistor is increased. This increased current then turns the transistor “on” and allows current to flow from the emitter to the collector. The current flowing from the collector is then controlled by adjusting the voltage applied to the base. In this way, the IXST40N60B can be used to control the current or voltage in a circuit.

The IXST40N60B is a very versatile device and can be used in a variety of applications. It is often used in power supplies, motor control circuits, adjustable speed drives, and other high-power applications. It can also be used in switching circuits and as a part of analog and digital systems. Its high switching rate and low on-state losses make it a very beneficial component in many applications.

In conclusion, the IXST40N60B is a single IGBT transistor which is often used in applications where the current or voltage needs to be controlled precisely. It is a voltage-controlled device and works by increasing the current through the transistor when a voltage is applied to the base. This increased current then turns the transistor “on” and allows current to flow from the emitter to the collector. This device is versatile and can be used in a variety of applications including power supplies, motor control circuits, adjustable speed drives, and other high-power applications.

The specific data is subject to PDF, and the above content is for reference

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