IXST35N120B

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The IXST35N120B is a high power, fast switching insulated gate bipolar transistor (IGBT). This type of device is mainly used in the field of switched-mode power supplies, power conversion, motor driving and other applications requiring high power voltage gate signals. The IXST35N120B is a member of the IXST Family of IGBTs.

The IXST35N120B offers an innovative design in a very small package size, allowing it to fit into a variety of application conditions. With an operating temperature range from -40°C to +125°C and superior thermal management, the IXST35N120B can handle high power applications. The IXST35N120B features low on-state voltage losses and low switching loss, making it an excellent choice for many power conversion and switching circuits.

The IXST35N120B is a single IGBT that consists of two parts; an NPN type power transistor and an N-channel insulated gate field effect transistor. It operates as a voltage controlled current source and uses an insulated gate voltage to control the current flow through the emitter-collector junction. This is the basis of its operation as a switch, and is why it is commonly used in switched-mode power supplies.

When a voltage is applied to the insulated gate, current will flow through the emitter-collector junction. This is the conduction mode, and can be used to switch the current through an electrical system. When the voltage is removed, current will stop flowing and the gate will become isolated from the base-collector junction. This is the triggering state and is the means by which a power switch is created.

The IXST35N120B has an on-state voltage drop of less than 1.3V and a maximum overload current of 250A. This superior performance makes it ideal for many industrial applications such as motor drivers, welding, inverters and power converters. The IXST35N120B is also well suited for automobile power applications, offering the highest levels of power switching performance.

The IXST35N120B is also suitable for use in renewable energy applications. It is able to withstand high voltages and offers superior thermal management in high temperature conditions. It can also be used in solar power converters to efficiently convert solar energy into electrical energy.

In conclusion, the IXST35N120B is a high power, fast switching IGBT that is suitable for a variety of applications. It offers superior performance in a very small package size and is particularly well suited for power conversion and switching circuits. The IXST35N120B is able to withstand high voltages, high temperature conditions and is ideal for renewable energy applications.

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