IXXN110N65B4H1

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The IXXN110N65B4H1 module is a kind of high voltage integrated gate bipolar transistor (IGBT) module comprised of four IGBTs, four FRDs, and two anti-parallel diodes. Known for its low conduction, switching losses and low voltage drop, the IXXN110N65B4H1 is a durable, reliable and cost effective power semiconductor component.The IXXN110N65B4H1 is used for numerous applications such as power supplies, motor control, and photovoltaic inverters, among others. It\'s common in a variety of applications, from home appliances to industrial machines, due to its excellent power performance at a high frequency, as well as its high temperature operation.The IXXN110N65B4H1 works by conducting current from anode to cathode. Anode and cathode are the main terminals. When the input voltage reaches the cut-off point or blocking voltage, the IXXN110N65B4H1 turns off. There is also a small path between the emitter and collector in the IXXN110N65B4H1 module that allows for current conduction when the input voltage falls below the cut-off voltage.The IXXN110N65B4H1 module is designed with four FRDs connected in series between anode and cathode. These FRDs provide the current regulated power to the IGBT and the anti-parallel diode. The four IGBT transistors are secured in the module with each one taking up one-fourth of the panel. They are connected to the common emitter and have their own anti-parallel FRD.The IXXN110N65B4H1 also features a low typical gate charge, low input gate current, high DC current gain, and fast turn-off time. The gate current of IXXN110N65B4H1 is very low and the DC current gain is high. This ensures accurate control over the voltage and current, which makes the IXXN110N65B4H1 ideal for a range of applications.IGBTs, such as the IXXN110N65B4H1, are manufactured with a range of parameters optimized for each application. The on-state/conduction, switchon/turn-on, and losses/switchoff parameters of IGBTs influence the performance of the entire application and the power dissipation. The IXXN110N65B4H1 is designed to provide excellent performance on all these parameters. In conclusion, the IXXN110N65B4H1 is a reliable, durable, and cost effective semiconductor component used for various applications. Its superior power performance at a high frequency, as well as its low conduction, switching losses and low voltage drop makes it ideal for applications where precise control of voltage and current is needed.

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