Allicdata Part #: | IXXN200N60C3H1-ND |
Manufacturer Part#: |
IXXN200N60C3H1 |
Price: | $ 25.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 200A SOT-227 |
More Detail: | IGBT Module PT Single 600V 200A 780W Chassis Mount... |
DataSheet: | IXXN200N60C3H1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 23.03660 |
Series: | GenX3™, XPT™ |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 780W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 100A |
Current - Collector Cutoff (Max): | 50µA |
Input Capacitance (Cies) @ Vce: | 9.9nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
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The IXXN200N60C3H1 module is a composite electrically-insulated type IGBT module. This module is composed of one N-channel IGBT chip, two antiparallel FRD, two reverse conducting diodes and one base termination clip, encapsulated in a metal-based package. It is mainly used in low-voltage switching applications such as AC and DC drives. The switching frequency of the IXXN200N60C3H1 module can be adjusted up to 20KHz.
In terms of its applications, the IXXN200N60C3H1 module can be used in medium- and low-voltage power transmission grid in power inverters, motor drives, uninterruptible power supply systems, welding machines, AC-DC frequency converters, etc. It can also be used to control the power frequency of rectifiers, which can reduce energy consumption loss during energy conversion.
The working principle of the IXXN200N60C3H1 module is based on the electrical-controlled gate electrode. When the electric voltage is applied to the gate of the IGBT, the electric current will flow from the collector to the emitter and the base current on the gate will decrease. This means that the gate has lower resistance, meaning that it will allow a certain amount of current to flow and eventually increase the collector current. In addition, increasing the IGBT\'s gate current can also reduce the collector-emitter voltage.
In conclusion, the IXXN200N60C3H1 module is capable of achieving high efficiency, low power consumption and fast switching performance in a wide range of applications. Its working principle is based on the electrical-controlled gate electrode, which enables low-voltage switching operations and enables it to be used in medium- and low-voltage power transmission grid.
The specific data is subject to PDF, and the above content is for reference
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