Allicdata Part #: | IXYA20N120C3HV-ND |
Manufacturer Part#: |
IXYA20N120C3HV |
Price: | $ 4.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 1200V 40A 278W Surface Mount TO-263HV |
DataSheet: | IXYA20N120C3HV Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.67630 |
Input Type: | Standard |
Supplier Device Package: | TO-263HV |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 29ns |
Test Condition: | 600V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 20ns/90ns |
Gate Charge: | 53nC |
Series: | XPT™, GenX3™ |
Switching Energy: | 1.3mJ (on), 1mJ (off) |
Power - Max: | 278W |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 96A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Active |
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IXYA20N120C3HV is a transistor belonging to the IGBTs (Insulated Gate Bipolar Transistors) - Single category. It is designed to support a variety of applications. This article will explain its application field and the working principle that is based on.
Features
The IXYA20N120C3HV is a 1200V Single IGBT. It has a high-density cell design that enables higher speed switching and lower switching losses. It also has an Embedded Gate Non-punch Through planar technology that helps reduce popular problems such as Miller plateau, latch-up, and second breakdown. Furthermore, it includes the options for Gate Emitter Voltage monitoring and temperature monitoring.
Applications
The IXYA20N120C3HV is typically used in various motor controls, such as Variable Frequency Drives (VFDs) and Uninterruptible Power Supplies (UPSs). Other possible applications include solar inverters, industrial lighting, AC servo drives, and welding machines. In addition, it can be used in many more fields, depending on the specific needs.
Working Principle
The IXYA20N120C3HV is a type of IGBT, an insulated gate bipolar transistor that combines the high input impedance and low saturation voltage of the BJT (Bipolar Junction Transistor) with the higher frequency response and fast switching speed of the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It works by controlling the amount of current that flows through it. Its Gate voltage acts as a switch, opening and closing the circuit and allowing or preventing current from passing through the transistor. When the Gate voltage is 0V, the transistor is considered to be “off” and no current is allowed to flow. When the Gate voltage is greater than 0V, the transistor is considered to be “on” and current is allowed to flow.
Conclusion
The IXYA20N120C3HV is a type of IGBT that is ideal for motor control and other applications requiring fast switching and low switching losses. Its Gate voltage acts as a switch, allowing or preventing the flow of current through the transistor. Its application field and working principle have been explained in this article.
The specific data is subject to PDF, and the above content is for reference
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