Allicdata Part #: | IXYA20N65C3D1-ND |
Manufacturer Part#: |
IXYA20N65C3D1 |
Price: | $ 2.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 650V 50A 200W Surface Mount TO-263AA |
DataSheet: | IXYA20N65C3D1 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.83065 |
Input Type: | Standard |
Supplier Device Package: | TO-263AA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 34ns |
Test Condition: | 400V, 20A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/80ns |
Gate Charge: | 30nC |
Series: | XPT™, GenX3™ |
Switching Energy: | 430µJ (on), 650µJ (off) |
Power - Max: | 200W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 105A |
Current - Collector (Ic) (Max): | 50A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Active |
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IGBT is a type of transistor that functions by combining an insulated gate, a bipolar junction transistor and a MOSFET. They are mainly used to control high voltage and current in a variety of different applications. IXYA20N65C3D1 is a single IGBT, which means it consists of a single semiconductor chip. It also has an improved capability for fast switching, making it an ideal solution for applications requiring high speed and accuracy.IGBTs are widely used in the electrical industry, from motor control applications, to inverters and aircraft power systems. IXYA20N65C3D1 is particularly suitable for these applications due to its advanced features. It offers a higher voltage rating of 2000V, and its low on-state and turn-off losses make it very efficient to use. It also has superior thermal performance and is capable of fast switching speeds, with a typical turn-on/off time of 700 ns/210 ns.The working principle of IXYA20N65C3D1 is the same as other IGBTs. It has three layers, the body, the emitter, and the collector. The emitter is the layer that displays the characteristics of the IGBT, with the material type and doping concentration used to define the behaviour of the IGBT. The layer between the emitter and collector acts as an insulation layer and is controlled by the gate voltage. When the gate is charged with a positive voltage, the IGBT turns on, allowing current to flow from the emitter to the collector. When the gate voltage is reversed, the IGBT turns off, blocking the current from flowing.In addition to its typical applications, IXYA20N65C3D1 can be used in other applications such as for welding and uninterruptible power supplies. It is a high performance IGBT and is capable of withstanding high temperature environments, making it an ideal choice for applications requiring high thermally efficient components.Overall, IXYA20N65C3D1 is a single IGBT with advanced features and improved performance. It offers a high voltage rating and excellent thermal performance, allowing it to be used in a variety of applications in the electrical industry. Its fast switching speeds and on-state losses make it very efficient to use, while its superior thermal performance enables it to withstand high temperature environments. For these reasons, IXYA20N65C3D1 is an ideal choice for applications requiring a single IGBT with excellent features and performance.
The specific data is subject to PDF, and the above content is for reference
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