IXYA8N90C3D1

Power - Max:	125W
Supplier Device Package:	TO-263AA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	114ns
Test Condition:	450V, 8A, 30 Ohm, 15V
Td (on/off) @ 25°C:	16ns/40ns
Gate Charge:	13.3nC
Input Type:	Standard
Switching Energy:	460µJ (on), 180µJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 8A
Current - Collector Pulsed (Icm):	48A
Current - Collector (Ic) (Max):	20A
Voltage - Collector Emitter Breakdown (Max):	900V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to IXYA8N90C3D1The IXYA8N90C3D1 transistor is an insulated-gate bipolar transistor (IGBT) specifically designed as a single. It is specially designed to meet the requirements of power switching applications, such as motor control, aircraft engine control systems, automotive electronics, etc.Application fieldThe IXYA8N90C3D1 is suitable for all kinds of power switching applications. It is especially suitable for motor control, aircraft engine control systems, automotive electronics, etc, where high-temperature and high-current voltage conditions are encountered. It is also used in applications where fast switching time and high switching frequencies are required, such as adjustable speed drives, portable power converters, and power supplies.AdvantagesThe IXYA8N90C3D1 offers several advantages for its application field. One of these advantages is that it is designed to reduce voltage loss during switching. This is done through the specific design of the gate, drain and source layers of the transistor. Additionally, it offers a high level of protection against thermal overload and short-circuiting. The IXYA8N90C3D1 provides lower switching losses and higher switching frequencies than many of its competitors.Working PrincipleThe working principle of the IXYA8N90C3D1 is based on the bipolar transistor mechanism. This works by allowing current to flow through the base region, creating a voltage between the emitter and collector. As the collector-emitter voltage is increased, current begins to flow through the collector-emitter region. By providing an input voltage to the base region, a higher current will flow between the collector and emitter, allowing the transistor to switch off quickly when the applied voltage is decreased.In addition to the bipolar transistor mechanism, the IXYA8N90C3D1 also employs an insulated gate. The insulated gate helps to reduce the amount of switching losses that occur during switching, as it acts as an insulator between the base and the collector-emitter region.ConclusionIn conclusion, the IXYA8N90C3D1 is an insulated-gate bipolar transistor (IGBT) designed as a single specifically for power switching applications, such as motor control, aircraft engine control systems, automotive electronics, etc. It is designed to reduce voltage loss during switching and offers a high level of protection against thermal overload and short-circuiting. The IXYA8N90C3D1 also offers lower switching losses and higher switching frequencies than many of its competitors. The working principle of the IXYA8N90C3D1 is based on the bipolar transistor mechanism, employing an insulated gate to reduce switching losses.

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