IXYK100N120C3

Power - Max:	1150W
Supplier Device Package:	TO-264 (IXYK)
Package / Case:	TO-264-3, TO-264AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	600V, 100A, 1 Ohm, 15V
Td (on/off) @ 25°C:	32ns/123ns
Gate Charge:	270nC
Input Type:	Standard
Switching Energy:	6.5mJ (on), 2.9mJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 100A
Current - Collector Pulsed (Icm):	490A
Current - Collector (Ic) (Max):	188A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

IXYK100N120C3 is a single insulated gate bipolar transistor (IGBT) that is used in a wide range of applications. It is designed to provide excellent power and performance in a variety of settings that require some form of electric control. This article will discuss the application fields of the IXYK100N120C3 and also its working principle.

Insulated Gate Bipolar Transistors

Insulated gate bipolar transistors, commonly known as IGBTs, are three-terminal power semiconductor devices that combine the principles of both metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Semiconductor-Controlled Rectifiers (SCRs). An IGBT is basically a MOSFET with a bipolar transistor integrated into the same circuit, making it more efficient than standard components.The major advantage of using an IGBT is that it can do all the same things as an ordinary transistor but with a larger current capacity and a significantly lower drop in voltage. It also has a much smaller switching time than a conventional transistor, which makes high-speed switching applications possible.

IXYK100N120C3 Application Fields

The IXYK100N120C3 is a high performance IGBT device that provides superior power capabilities. It is capable of handling up to 1200 V and is suitable for applications such as:• Motor drives• Power converters• Uninterruptible power supplies (UPS)• High frequency and high power switching• High voltage applications• Solar inverters• Automotive applications

Working Principle of IXYK100N120C3

The IXYK100N120C3 works by using a MOS-controlled thyristor and a bipolar transistor to achieve fast turn-off and turn-on switching, with low power losses. This efficient operation is made possible by the integration of the two devices as they work together to control the current.When the gate voltage is positive, the MOSFET conducts and turns on the IGBT, allowing current to flow from collector to emitter. When the gate voltage is negative, the MOSFET turns off, and current ceases to flow.

Conclusion

The IXYK100N120C3 is an excellent IGBT device that offers superior power capabilities and is suitable for a wide range of applications. Its working principle is based on the integration of a MOSFET and a bipolar transistor which provides efficient operation with fast turn-off and turn-on switching, and low power losses. It is a reliable, durable and cost-effective option for many high voltage and high power applications.

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