IXYK200N65B3 Discrete Semiconductor Products |
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Allicdata Part #: | IXYK200N65B3-ND |
Manufacturer Part#: |
IXYK200N65B3 |
Price: | $ 9.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 650V 410A 1560W Through Hole TO-264 |
DataSheet: | IXYK200N65B3 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 8.35835 |
Input Type: | Standard |
Supplier Device Package: | TO-264 |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 108ns |
Test Condition: | 400V, 100A, 0 Ohm, 15V |
Td (on/off) @ 25°C: | 60ns/370ns |
Gate Charge: | 340nC |
Series: | XPT™, GenX3™ |
Switching Energy: | 5mJ (on), 4mJ (off) |
Power - Max: | 1560W |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 100A |
Current - Collector Pulsed (Icm): | 1100A |
Current - Collector (Ic) (Max): | 410A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Active |
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Transistors, such as IXYK200N65B3, are semiconductor devices that can be used to control current, voltage and power. They are commonly used to amplify electrical signals and as switches to control power. In particular, IXYK200N65B3, which belongs to the single IGBTs family, is an insulated gate bipolar transistor.
The construction of the IXYK200N65B3 consists of a three-layer base. On the bottom is the emitter region, which is heavily doped and is typically made of p-doped material. Above that is the base region, which is a thin layer of lightly doped n-doped material. Lastly, on top is the collector region, which comprises multiple layers of doped material including a layer of p-doped material and an oxide layer. This construction allows the IXYK200N65B3 to act as both an n-channel and p-channel device.
The IXYK200N65B3 is a low-frequency power device, typically used for low-frequency switching applications such as AC motor speed and power control. It can be used in AC motor drives and power converters, and can replace traditional IGBTs due to its higher switching speed and higher efficiency. The IXYK200N65B3 is also suitable for heavy DC applications such as uninterruptible power supplies and electric vehicle charging.
Working Principle of IXYK200N65B3
The working principle of the IXYK200N65B3 is based on the concept of the MOSFET – the Metal-Oxide Field-Effect Transistor. When a current is applied to the gate of the transistor, it modulates the conductivity of the channel. When the gate voltage is below the threshold voltage, no current flows and the transistor is off. However, when the gate voltage is higher than the threshold voltage, the channel is open and electric current flows freely.
The IXYK200N65B3 works similarly to the MOSFET, but it has an additional layer of insulation between the gate and source. This insulation layer acts as a barrier, blocking the flow of current from the gate to the source and preventing the transistor from being turned on unintentionally. The insulation layer also has the added benefit of reducing the transistor\'s on-resistance, allowing it to handle higher currents with lower voltages.
The IXYK200N65B3 also differs from the MOSFET in its switching speed. The IXYK200N65B3 can switch at frequencies up to 200kHz, compared to the MOSFET\'s switching speed of around 10kHz. This higher switching speed allows IXYK200N65B3 to be used in more demanding applications, such as frequency inverters and AC motor drives.
Conclusion
The IXYK200N65B3 is a single IGBT that has been designed for low-frequency switching applications. It has a three-layer structure that allows it to act as both an n-channel and p-channel device, and it can switch at frequencies up to 200kHz. The IXYK200N65B3 is suitable for applications such as AC motor drives, power converters, uninterruptible power supplies and electric vehicle charging.
The specific data is subject to PDF, and the above content is for reference
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