IXYK120N120C3 Allicdata Electronics
Allicdata Part #:

IXYK120N120C3-ND

Manufacturer Part#:

IXYK120N120C3

Price: $ 15.72
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 240A 1500W TO264
More Detail: IGBT 1200V 240A 1500W Through Hole TO-264 (IXYK)
DataSheet: IXYK120N120C3 datasheetIXYK120N120C3 Datasheet/PDF
Quantity: 385
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 14.28840
10 +: $ 12.99190
25 +: $ 12.01740
100 +: $ 11.04310
250 +: $ 10.06870
Stock 385Can Ship Immediately
$ 15.72
Specifications
Series: GenX3™, XPT™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 700A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Power - Max: 1500W
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Input Type: Standard
Gate Charge: 412nC
Td (on/off) @ 25°C: 35ns/176ns
Test Condition: 600V, 100A, 1 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXYK)
Description

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The IXYK120N120C3 is an IGBT single from Infineon Technologies AG. It has three main terminals, namely the Cathode (ground / negative terminal), the Collector (positive terminal) and the Emitter. The collector and emitter are typically used to control the voltage and current flows through the device, while the cathode is the low-side ground terminal.

The IXYK120N120C3 is a 900V power semiconductor device that offers a current rating of 120 A, while the maximum power dissipation is at 125W. In order to reduce the power dissipation, the device has a high voltage withstand capability as well as a negative temperature coefficient. This is to ensure safe and reliable operation of the device.

This device is commonly used in Industrial and consumer applications. Its primary application is in inverter drives and AC motor control. It is popularly used in air conditioners and home booster drives, electric tools, welding machines, solar and electric vehicle drives, UPS systems and medical equipment. The IXYK120N120C3 also offers both high voltage and high current protection features in order to prevent any damages from large voltage and current spikes.

The working principle of the IXYK120N120C3 is based on a diffusion current mechanism. When the voltage across the Collector and Emitter is increased, an electric field will be induced and create a diffusion current across the Emitter and Collector junction. This diffusion current will then be amplified and lead to an increase in the output current.

In addition, the Junction Field Effect Transistor (JFET) will be used as a control element. The JFET will be used to control the width of the diffusion current and also the delay time. The IXYK120N120C3 IGBT also has a built-in Inter-Locked Gate (ILG) feature to ensure the reliability and safety in the case of accidental short circuit conditions.

The IXYK120N120C3 IGBT single is a reliable and durable device that is designed to make your industrial and consumer applications more efficient. With its high voltage and current protection features, it can protect your application from large voltage and current spikes. The inclusion of a JFET and IGL feature makes the IXYK120N120C3 an ideal choice for efficient power control solutions.

The specific data is subject to PDF, and the above content is for reference

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