IXZ631DF12N100 Allicdata Electronics
Allicdata Part #:

IXZ631DF12N100-ND

Manufacturer Part#:

IXZ631DF12N100

Price: $ 27.15
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS-RF
Short Description: IXZ631DF12N100 1000V 12A INTEGRA
More Detail: Low-Side Gate Driver IC Non-Inverting 10-SMD
DataSheet: IXZ631DF12N100 datasheetIXZ631DF12N100 Datasheet/PDF
Quantity: 38
1 +: $ 24.68340
10 +: $ 23.08380
25 +: $ 21.34940
100 +: $ 20.01510
250 +: $ 18.68080
Stock 38Can Ship Immediately
$ 27.15
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 8 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 72A, 72A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1000V
Rise / Fall Time (Typ): 2.4ns, 1.55ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, Flat Lead
Supplier Device Package: 10-SMD
Description

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IXZ631DF12N100 is a gate driver in Power Management IC (PMIC) applications. It is used to interface between higher voltage power switch field effect transistors (FETs) and surrounding low voltage logic or controllers. It converts a low-voltage logic signal into a higher voltage and power level that can be used to control and protect the power FETs.

The IXZ631DF12N100 features an integrated low-side FET, high-side FET and charge pump to protect the power FETs and improve efficiency. It comes in an integrated package with a small footprint which makes it more suitable for applications with limited board space. Its high output current capability makes it suitable for powering high-power FETs and supporting wide voltage range applications. Additionally, this device has an under-voltage lockout feature for improved protection.

The IXZ631DF12N100 is commonly used in automotive, renewable energy, lighting, home appliances and industrial automation applications. Its enhanced power FETs protection and high performance switching makes it an ideal choice for automotive applications, while its high integration and low-cost make it suitable for applications with limited power budgets. The device is available in surface mount (SMT) packages, allowing it to be used in any standard PCB assembly techniques.

Working Principle: The IXZ631DF12N100 Gate Driver operates on a Pulse Width Modulation (PWM) principle. It takes an input signal from a controller and uses this to stimulate a charge pump which charges a storage capacitor and then inverts the voltage to output a high voltage gate signal. This gate signal can then be used to turn on and off the power FETs.

The PWM-mode of operation ensures that the FETs are turned on and off according to the input signal. This helps reduce power losses and provides better energy efficiency. This device also supports an internal Under Voltage Lockout (UVLO) function, which allows it to turn off the FETs and prevent any damage.

In addition to its robust PWM and UVLO for improved performance and protection, the IXZ631DF12N100 also features a fault protection feature that provides an adjustable time-out period between each FET turn-on/off cycle, allowing for more accurate power control.

The IXZ631DF12N100 is an ideal solution for applications with limited power budgets and tight space. Its enhanced protection and integration minimizes external components and improves system efficiency. It is a widely used device for a variety of PMIC applications, and its low-cost, integrated design makes it perfect for applications with limited budgets.

The specific data is subject to PDF, and the above content is for reference

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