Allicdata Part #: | J109_D27Z-ND |
Manufacturer Part#: |
J109_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 625MW TO92 |
More Detail: | JFET N-Channel 25V 625mW Through Hole TO-92-3 |
DataSheet: | J109_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 40mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 2V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 12 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J109 |
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The J109_D27Z is a type of field effect transistor (FET) that is commonly used to act as an amplifier, amplifier switch, or in a photo diode circuit to control the flow of current. This type of transistor has a number of interesting properties, making it an incredibly versatile device for use in electronic projects and applications. In this article, we will look at the application field and working principle of the J109_D27Z.
The main application fields for the J109_D27Z are the field of amplifier switches, amplifiers, and photo diode circuits. This type of FET is especially useful for its high gain, low noise, and short switching times. A transistor works by controlling the flow of current between two terminals, the "source" and "drain." The current flow is regulated by a gate voltage, with the FET turning on or off based on this voltage. This type of transistor is often employed in applications where switching is required, such as audio amplifiers or video amplifiers.
The working principle of the J109_D27Z is based on the lead semiconductor material it is made of, which has a low voltage, low leakage current and high gain characteristics. The substrate material for the FET is usually silicon, with the gate and drain terminals exposed. In the basic configuration, the gate acts as a capacitor, maintaining a potential difference between the gate and the substrate. When a voltage is applied to the gate, this changes the electric field on the surface, causing an electric current to flow. This current is regulated by the gate voltage, and determines the amount of current that is allowed to flow between the drain and the source.
The J109_D27Z boasts a number of features, including low power dissipation and extremely low input bias current. These features make it an ideal device for use in low-power applications such as switching. The low input bias current also helps to reduce the switching time, while the low power dissipation helps the device to avoid overheating and the effects of thermal run-away.
The J109_D27Z is a highly reliable, low power device that is suitable for a variety of applications. Its high gain and short switching times make it an excellent choice for audio/video amplifiers, motor control circuits, and photo-diode circuits. It is also used as a switch in electronic circuits, making it a very versatile device.
The J109_D27Z is a type of field effect transistor (FET) that is used in a wide variety of applications, from motor control to audio/video amplifiers and photo-diode circuits. Its high gain, low noise, and short switching times make it an ideal device for use in a variety of projects. Its low power dissipation and low input bias current make it an excellent choice for low-power applications, while its high reliability ensures that it will perform in a variety of environments.
Overall, the J109_D27Z is an incredibly versatile FET that is suitable for use in a variety of projects. Its low power dissipation, low input bias current, and high reliability make it an excellent choice for use in low power applications and audio/video amplifiers. Its high gain and short switching times also make it an ideal choice for use in motor control circuits and photo-diode circuits.
The specific data is subject to PDF, and the above content is for reference
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