J175_D27Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

J175_D27Z is a type of junction field effect transistor (JFET). It is a three-terminal device that uses gate voltage as a control over current. The J175 is a N-Channel JFET, where the field effect is induced through an electric field which is generated by applying a voltage between the source (S) and gate (G) terminals. This electric field controls the resistive channel between the drain (D) and source terminals.

J175-D27Z transistors can be used in a variety of application fields and it is also relatively easy to use. These include voltage trimming, high input resistance amplifier applications, and high power applications such as voltage regulators, class-AB amplifiers, and current sources. The J175-D27Z transistors can also be used as a switch to control current.

The working principle behind the J175 D27Z is based on the principle of a field effect transistor (FET). FETs are three terminal devices that use a small electric field to control their current carrying capacity. In the case of the J175, the electric field is generated by applying an electric potential between the source and gate terminals, which in turn controls the resistive channel between the drain and source terminals. This arrangement allows for the current to be controlled through a gate voltage.

As far as the performance of the J175 D27Z is concerned, this transistor is designed to produce a maximum output of 1.5 amps with a voltage drop of 0.9V. The operating temperature range of the J175 is between -55 and +175°C. The deviceis also capable of handling high frequency signals with a good degree of accuracy. This device is particularly suitable for surge protection applications since it can handle high peak currents of up to 1.5 times its maximum output current.

The J175 D27Z is also equipped with a high breakdown voltage and a low on-resistance, which makes it suitable for power amplifier and linear applications. Additionally, this device has a low parasitic capacitance between its drain and source terminals, which allows it to handle high frequency signals without any noticeable distortion. Furthermore, this device has a high gain bandwidth product, allowing it to be used in a wide range of applications.

In conclusion, the J175-D27Z is a junction field effect transistor (JFET) that uses a gate voltage as a control of current. This device has many uses and characteristics that make it suitable for a variety of applications including high power applications and voltage trimming. Additionally, the J175-D27Z has a high breakdown voltage, low on-resistance, and a low parasitic capacitance between its drain and source terminals, which makes it capable of handling high frequency signals with a good degree of accuracy. Overall, the J175-D27Z is an excellent device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference